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Impact of Pass-Transistor Logic (PTL)
on Power, Delay and Area
Kalyana R Kantipudi
ECE Department
Auburn University
Dec. 1, 2005
ELEC 6970-001 Class Presentation
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Outline:
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Introduction
Pros & Cons of PTL
A PTL Design
Need for an Improved Design
A Transmission gate Design
A new improved PTL Design
Conclusions
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ELEC 6970-001 Class Presentation
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Introduction:
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The power equation:
Ptotal = CLVDD2 + TscVDDIpeak + VDDIleakage
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Pdyn = VDD2fclk.Σan.cn + VDD.ΣIsc n
Pleakage = VDDIsubleakage
= μ0 Cox (W/L) Vt2 exp{(VGS-VTH)/nVt}
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What Can We Reduce?
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Activity in the circuit
Switching capacitance
1.
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Reducing Width and Length
Supply voltage reduction
Short-circuit reduction
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What PTL Can Offer?
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One pass-transistor network is enough.
Reduction in number of transistors.
Decrease in width and length of transistors.
Results in smaller ‘input’ and ‘driving’ loads.
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The Catch…
Reduction in level of the signal (VDD-Vth-IR).
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Needs level restoration at gate outputs in order to
avoid static currents.
Adjust threshold voltages (Vthp > Vthn).
Only one single path through each network must
be active at a time. (To avoid shorts between the
inputs)
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1.
A multiplexer kind of structure is to be implemented all
the time.
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PTL Logic Formulation and
Implementation:
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Why 250nm Instead Of
180nm Technology
For 180 nm: Vthn=0.51V Vthp=-0.52V
VDD
VDD - VTp
If a pass transistor is feeding an
inverter:
Vi(t)
Vo(t)
Volt
Vin(inv) = VDD – Vthn – IRdrop
= 1.8 – 0.51 – 0.2 = 1.09 V
VTn
Other solutions:
But for the p-transistor in an inverter
to switch-OFF, the Vin should be
atleast (VDD – |Vthp| = 1.28 V)
1. Keep Vthn of the NMOS pass transistors as low as possible.
2. Keep Vthp of the inverter higher than Vthn.
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Trade-offs Needed
Delay due to load Vs. Delay due to gate
Widths of the pass transistors: 30-9-7-5-3-1
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Trade-offs needed
Delay due to load Vs. Delay due to gate
Widths of the pass transistors: 30-9-7-5-3-7/3-7/7-1
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Transmission Gate
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Maintains the voltage swing of the signal
Strong ‘1’ and strong ‘0’.
As there are two channels conducting,
the device speed improves.
It is found that the transmission gate has
robust characteristics compared to a
CMOS gate.
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The AND Gate:
CMOS AND gate:
Static Power: 31.1411 pW
Dynamic Power: 1.8285 uW
Critical Delay: 214 pico secs.
TX gate based AND:
Static Power: 43.177 pW
Dynamic Power: 417.863 nW
Critical Delay: 172 pico secs.
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How to get to those features:
Parameters:
Lpass_p/Lpass_n
Wp/Lp,Wn/Ln
Static
Power
Dynamic
Power
Delay
in Pico secs.
(1/1,9/2,5/2)
59.88pW
618.57nW
173
(1/1,1/1,1/1)
4.42uW
24.01uW
184
(1/1,3/1,2/1)
2.67nW
32.03uW
145
(1/1,3/2,2/2)
146.54pW
368.18nW
184
(1/1,6/2,3/3)
43.17pW
417.86nW
172
(4/2,6/2,3/3)
43.18pW
1.07uW
366
(2/2,6/2,3/3)
43.18pW
609.96nW
260
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Regarding the Robustness of Tx Gate
Gate Status
Static Power
Dynamic Power
Delay
in Pico secs.
CMOS
31.14pW
1.83uW
214
Feeding an inverter
78.49pW
2.14uW
257.5
Tx gate
43.17pW
417.86nW
172
Feeding an inverter
80.31pW
960.32nW
238.2
Without any load
Without any load
The Tx gate based “multi_cell” implementation is in progress >>
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A New XOR Design is Invented[4]
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The New “multi_cell” Design[5]
In this new design, the entire
“Multi_cell” needs just 15 transistors.
Most of the transistors will be in their
minimum size.
Questions:
Will it work ???
Does it has the drive capability ?
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The Waveforms 
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Circuit specifications:
Circuit Type
Static Power
Dynamic Power
Delay
PTL
353.36pW 79.24uW
8.45ns
CMOS
356.56pW 12.49uW
551ps
New PTL
105.15pW 16.63uW
662ps
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Regarding The Area Specs.
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CMOS has 38 transistors while the PTL
has 39 transistors (most of the transistors
having minimum feature size).
Considering the ( ΣLW ) the area of CMOS
cell is (960□/233□ = 4.12) times the size
of the PTL cell.
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Conclusions:
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The area overhead of CMOS is at least 4
times more than the PTL.
The power consumption is less in case
of PTL compared to CMOS.
A good PTL design needs a lot of astute
trade-offs.
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References:
1.
2.
3.
4.
5.
6.
7.
8.
J. M. Rabaey, A. Chandrakasan, B Nikolic, Digital Integrated Circuits-A Design
Perspective. Prentice Hall, 2004.
R. Zimmermann and Wolfgang Fichtner, “Low-power Logic Styles: CMOS Versus
Pass-Transistor Logic,” IEEE J. Solid-State Circuits, vol.32, pp. 1079-1090, Jul. 1997.
Geun Rae Cho, Tom Chen. "On The Impact of Technology Scaling On Mixed
PTL/Static Circuits," 2002 IEEE International Conference on Computer Design
(ICCD'02),p. 322, 2002.
Jyh-Ming Wang, Sung-Chuan Fang, Wu-Shiung Feng,“New Efficient Designs for XOR
and XNOR Functions on the Transistor Level,” IEEE J. of Solid-state Circuits, Vol. 29,
pp. 780-786, July 1994.
H. T. Bui, Y. Wang, and Y. Jiang, "Design and analysis of low-power IO-transistor full
adders using novel XOR-XNOR gates," IEEE Trans. on Circuits and Systems-I/:
Analog and digital signal processing, vol. 49, no. 1, pp. 25-30, Jan 2002.
H. Lee and G.E. Sobelman, “A new low-voltage adder circuit,” in Proc. 7th Great
Lakes Symp. VLSI, Urbana, IL, 1997.
A. Shams and M. Bayoumi, “A new full adder cell for low-power applications,” in
Proc. of the 1998 Great Lakes Symposium ,1997.
K. Taki, “A Survey for Pass-Transistor Logic Technologies”, Proc. Asia South-Pacific
Design Automation Conference , pp. 223-226, February 1998.
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