Transcript No Slide Title

Digital Integrated
Circuits
A Design Perspective
Jan M. Rabaey
Anantha Chandrakasan
Borivoje Nikolic
Coping with
Interconnect
Revised from Digital Integrated Circuits, © Jan M. Rabaey
© Digital Integrated Circuits2nd
Interconnect
Impact of Interconnect Parasitics
• Reduce Robustness
• Affect Performance
• Increase delay
• Increase power dissipation
Classes of Parasitics
• Capacitive
• Resistive
• Inductive
© Digital Integrated Circuits2nd
Interconnect
INTERCONNECT
© Digital Integrated Circuits2nd
Interconnect
Capacitive Cross Talk
X
CXY
VX
Y
CY
© Digital Integrated Circuits2nd
Interconnect
Capacitive Cross Talk
Dynamic Node
A non-related signal Y is
routed in Metal 1 wire
over the polysilicon gate
of the inverter gate.
V DD
CLK
CXY
Y
In 1
In 2
In 3
Assume that CY=6fF
and CXY= (3*1*0.057+
CY
PDN
CLK
3 x 1 mm overlap: 0.19 V disturbance
© Digital Integrated Circuits2nd
X
2.5 V
2*3*0.054)=0.5fF
Combined with charge
0V
redistribution and clockfeed through effects,
this might cause circuit
failure.
Interconnect
Wiring Capacitances (0.25mm CMOS)
Rows represent the top plate, columns the bottom plate.
Shaded row for fringing capacitance in aF/µm, unshaded for
parallel plate capacitance (area capacitance) in aF/µm^2
40
95
85
85
85
115
© Digital Integrated Circuits2nd smaller
Interconnect
Capacitive Cross Talk: Driven Node
0.5
0.45
0.4
X
VX
RY
CXY
0.3
Y
CY
tr↑
0.35
tXY = RY(CXY+CY)
0.25
0.2
0.15
V (Volt)
0.1
0.05
0
0
0.2
0.4
0.6
0.8
1
t (nsec)
If the rise time is comparable or larger than the time constant,
the peak value of disturbance is diminished. So we need to
Keep time-constant smaller than rise time, that is to decrease either
capacitance or resistance (keeper transistor in dynamic design).
© Digital Integrated Circuits2nd
Interconnect
Dealing with Capacitive Cross Talk

Avoid floating nodes

Protect sensitive nodes

Make rise and fall times as large as possible
(*?)

Do not run wires together for a long distance

Use shielding wires

Use shielding layers
© Digital Integrated Circuits2nd
Interconnect
Shielding
Shielding
wire
GND
V DD
Shielding
layer
GND
Substrate (GND )
Interleave every signal layer with a GND or VDD metal
plane
© Digital Integrated Circuits2nd
Interconnect
Cross Talk and Performance
- When neighboring lines
switch in opposite direction of
victim line, delay increases
Cc
DELAY DEPENDENT UPON
ACTIVITY IN NEIGHBORING
WIRES
- Both terminals of capacitor are switched in opposite
directions (0  Vdd, Vdd  0), Miller Effect
- Effective voltage is doubled and additional charge is
needed (from Q=CV)
© Digital Integrated Circuits2nd
Interconnect
Impact of Cross Talk on Delay
Activity on bus of different bits
r is ratio between capacitance to neighbor and to GND
© Digital Integrated Circuits2nd
Interconnect
Encoding Data Avoids Worst-Case
In
Conditions
Encoder
Bus
Decoder
Out
It is possible to encode the data in such a way that the
transitions that “victimize” delay are eliminated. This requires
that the bus interface units include encode/decoder functions.
© Digital Integrated Circuits2nd
Interconnect
Structured Predictable Interconnect
V: VDD
V
S: signal
S G S V S
S
G
S
V
G: GND
S
V
Example: Dense Wire Fabric ([Sunil Kathri])
Trade-off:
• Cross-coupling capacitance 40x lower, 2% delay variation
• Increase in area and overall capacitance
Also widely used in FPGAs
© Digital Integrated Circuits2nd
Interconnect
Interconnect Projections
Low-k dielectrics



Both delay and power are reduced by dropping interconnect
capacitance
Types of low-k materials include: inorganic (SiO2), organic
(Polyimides) and aerogels (ultra low-k)
The numbers below are on the
conservative side of the NRTS roadmap
Generation
Dielectric
Constant
0.25
mm
3.3
© Digital Integrated Circuits2nd
0.18
mm
2.7
0.13
mm
2.3
0.1
mm
2.0
0.07
mm
1.8
e
0.05
mm
1.5
Interconnect
Driving Large Capacitances
V DD
V in
V out
CL
• Transistor Sizing
• Cascaded Buffers
© Digital Integrated Circuits2nd
Interconnect
Using Cascaded Buffers
In
Out
1
2
0.25 mm process
Cin = 2.5 fF
tp0 = 30 ps
N
CL = 20 pF
F = CL/Cin = 8000
fopt = 3.6
N=7
tp = 0.76 ns
(See Chapter 5)
© Digital Integrated Circuits2nd
Interconnect
Delay as a Function of F and N
10,000
F = 10,000
tp/tp0
1000
p
t/0
tp
100
F = 1000
10
1
3
5
7
F = 100
9
11
Number of buffer stages N
© Digital Integrated Circuits2nd
Interconnect
Output Driver Design
Trade off Performance for Area and Energy
Given tpmax find N and f
 Area
 Energy
f 1
F 1
A
 1  f  f  ...  f A 
A 
A
f 1
f 1
2
N
N 1
driver
min

Edriver  1  f  f 2  ...  f
N 1
C V
i
2
DD
min

min
F 1
C
2
2
CiVDD
 L VDD
f 1
f 1
To a first order analysis, this simply says that small sizing
factor f causes large area and power consumption!!!
© Digital Integrated Circuits2nd
Interconnect
Output Driver Design: design for right speed
0.25 mm process, CL = 20 pF
Transistor Sizes for optimally-sized cascaded buffer tp = 0.76 ns
fopt = 3.6
Transistor Sizes of redesigned cascaded buffer tp = 1.8 ns
fd = 20
Overall area of the later solution is 7 times smaller compared to the
first one, while delay is increased by a factor of 2. Also, overall
power dissipation of the load and buffer is reduced by 24%.
© Digital Integrated Circuits2nd
Interconnect
How to Design Large Transistors
D(rain)
Multiple
Contacts
Reduces diffusion capacitance
Reduces gate resistance
S(ource)
G(ate)
small transistors in parallel
© Digital Integrated Circuits2nd
Interconnect
Bonding Pad Design
Bonding Pad
GND
100 mm
Out
VDD
© Digital Integrated Circuits2nd
In
GND
Guard ring
Out
Interconnect
Guard ring
 Guard rings are grounded p+ diffusions in a p-well and
supply-connected n+ diffusions in an n-well that are used
to collect injected minority carriers before they reach the
base of the parasitic bipolar transistors.
 They should be used surrounding the NMOS/PMOS
transistors in the final stage of the output pad driver.
 Used a lot in analog VLSI design.
© Digital Integrated Circuits2nd
Interconnect
Chip Packaging
Bonding wire
•Bond wires (~25mm) are used
to connect the package to the chip
Chip
L
Mounting
cavity
L´
Lead
frame
Pin
© Digital Integrated Circuits2nd
• Pads are arranged in a frame
around the chip
• Pads are relatively large
(~100mm in 0.25mm technology)
•Many chips areas are ‘pad limited’
Interconnect
Pad Frame
Layout
© Digital Integrated Circuits2nd
Die Photo
Interconnect
Tristate Buffers
 Most of the driver circuits have been simple inverters.
 Tristate buffers is a variant. Suppose that one device is
sending information on the bus, all other transmitting
devices should be disconnected from the bus. This can
be achieved by putting the output buffers of those devices
in an high-impedance state Z that effectively disconnects
the gate from the output wire.
© Digital Integrated Circuits2nd
Interconnect
Tristate Buffers
V DD
V DD
En
En
Out
Out
In
En
In
En
Increased output drive
Out = In.En + Z.En
© Digital Integrated Circuits2nd
Interconnect
INTERCONNECT
© Digital Integrated Circuits2nd
Interconnect
Impact of Resistance
 Impact
of resistance is commonly seen
in power supply distribution:
 IR drop
 Voltage variations
 Delay increases
 Power
supply is distributed to minimize
the IR drop and the change in current
due to switching of gates
© Digital Integrated Circuits2nd
Interconnect
IR Introduced Noise
A 2cm long, 1 µm wide Vdd or Gnd wire with 1mA current and
sheet resistance of 0.05 Ohm/□ gives a voltage drop of 1V.
V DD
f
pre
I
R9
V DD - Δ V
X
M1
I
ΔV
ΔV
R
Ohmic voltage drop on the supply rails reduces the noise
margins
© Digital Integrated Circuits2nd
Interconnect
Power Distribution

Low-level distribution is in Metal 1

Power is ‘strapped’ in higher layers of metal.

The spacing is set by IR drop,
electromigration, inductive effects

Always use multiple contacts on straps
© Digital Integrated Circuits2nd
Interconnect
Power and Ground Distribution
GND
VDD
Logic
Logic
VDD
GND
(a) Finger-shaped network
© Digital Integrated Circuits2nd
VDD
GND
(b) Network with multiple supply pins
Interconnect
3 Metal Layer Approach (EV4)
3rd “thick” metal layer added to the
technology for EV4 design
Power supplied from two sides of the die via 3rd metal layer
2nd metal layer used to form power grid
90% of 3rd metal layer used for power/clock routing
Metal 3
Metal 2
Metal 1
© Digital Integrated Circuits2nd
Courtesy Compaq
Interconnect
4 Metal Layers Approach (EV5)
4th “thick” metal layer added to the
technology for EV5 design
Power supplied from four sides of the die
Grid strapping done all in metal
90% of 3rd and 4th metals used for power/clock routing
Metal 4
Metal 3
Metal 2
Metal 1
© Digital Integrated Circuits2nd
Courtesy Compaq
Interconnect
6 Metal Layer Approach – EV6
2 reference plane metal layers added to the
technology for EV6 design
Solid planes dedicated to Vdd/Vss
Significantly lowers resistance of grid
Lowers on-chip inductance
RP2/Vdd
Metal 4
Metal 3
RP1/Vss
Metal 2
Metal 1
© Digital Integrated Circuits2nd
Courtesy Compaq
Interconnect
Power Dissipation Trends
160
140
120
100
80
60
40
20
0

3.5
2.5
2
1.5
1


0
EV4 EV5 EV6 EV7 EV8

Supply Current
3.5
120
3
100
2.5
80
2
60
1.5
40
1
20
0.5
0
Better cooling technology needed
Supply current is increasing faster!
On-chip signal integrity will be a major
issue
Power and current distribution are critical
Opportunities to slow power growth


Voltage (V)
Current (A)

0.5
140
Power consumption is increasing

3
Voltage (V)
Power (W)
Power Dissipation



Accelerate Vdd scaling
Low κ dielectrics & thinner (Cu)
interconnect
SOI circuit innovations
Clock system design
micro-architecture
0
EV4 EV5 EV6 EV7 EV8
© Digital Integrated Circuits2nd
ASP DAC 2000
19
Interconnect
Resistance and the Power
Distribution Problem: sizing
Before
After
• Requires fast and accurate peak current prediction
• Heavily influenced by packaging technology
© Digital Integrated Circuits2nd
Source: Cadence
Interconnect
Electromigration (1)
The current density in a metal wire is limited due to an
effect called electromigration, which eventually causes the
wire to break or to short-circuit to another wire.
Line
open
failure
Limits dc-current to 1 mA/mm
© Digital Integrated Circuits2nd
Interconnect
Electromigration (2)
Average current density and temperature are two main factors
Open
failure in
contact
© Digital Integrated Circuits2nd
Interconnect
Resistivity and Performance
Tr
The distributed rc-line
R1
C1
RN-1
R2
C2
RN
CN-1
CN
Vin
2.5
Delay ~
L2
x = L/4
voltage (V)
Diffused signal
propagation
x= L/10
2
1.5
x = L/2
1
x= L
0.5
0
© Digital Integrated Circuits2nd
0
0.5
1
1.5
2
2.5
3
time (nsec)
3.5
4
4.5
5
Interconnect
Driving an RC-line
Rs
(r w,cw,L)
Vout
Vin
© Digital Integrated Circuits2nd
Interconnect
The Global Wire Problem
Challenges

No further improvements to be expected after the
introduction of Copper (superconducting, optical?)

Design solutions
 Use of fat wires
 Insert repeaters — but might become prohibitive (power,
area)
 Efficient chip floorplanning

Towards “communication-based” design
 How to deal with latency?
 Is synchronicity an absolute necessity?
© Digital Integrated Circuits2nd
Interconnect
Interconnect Projections: Copper

Copper is planned in full sub-0.25
mm process flows and large-scale
designs (IBM, Motorola, IEDM97)

Cu ~ 2.2 mW-cm vs. 3.5 for Al(Cu)
 40% reduction in resistance

Electromigration improvement;
100X longer lifetime (IBM,
IEDM97)
 Electromigration is a limiting factor
beyond 0.18 mm if Al is used (HP,
IEDM95)
© Digital Integrated Circuits2nd
Vias
Interconnect
Interconnect:
# of Wiring Layers
# of metal layers is steadily increasing due to:
 = 2.2
mW-cm
M6
• Increasing die size and device count: we need
more wires and longer wires to connect
everything
Tins
• Rising need for a hierarchical wiring network;
M5
W
local wires with high density and global wires with
low RC
S
M4
H
3.5
Minimum Widths (Relative)
4.0
3.5
3.0
M3
3.0
2.5
2.5
2.0
M2
1.5
M1
1.0
poly
0.5
0.25 mm wiring stack
0.0
M5
M4
M3
M2
substrate
© Digital Integrated Circuits2nd
Minimum Spacing (Relative)
M5
2.0
M4
M3
1.5
M1
1.0
Poly
0.5
M2
M1
Poly
0.0
m
m
m
m
m
m
m
m
m
m
Interconnect
Diagonal Wiring
destination
diagonal
y
source
x
Manhattan
• 20+% Interconnect length
reduction
• Clock speed
Signal integrity
Power integrity
• 15+% Smaller chips
plus 30+% via reduction
© Digital Integrated Circuits2nd
Courtesy Cadence X-initiative
The main problem is that
incorporating diagonal design
in Design Automation tools is
harder
Interconnect
Reducing RC-delay
Optimal number of wire segments
for a long wire!
Repeater
Lcrit=L / M
AS inverter chain, the optimum is achieved when the delay of
each wire segment is equal to that of a repeater!
© Digital Integrated Circuits2nd
Interconnect
Wire pipelining
clk
Reg-
Reg-
Reg-
ister
ister
ister
• Even with repeater, wire delay may still be larger than the
clock cycle
• To accommodate this delay with GHz clock, wire
pipelining techniques can be used
© Digital Integrated Circuits2nd
Interconnect
Delay in Transmission Gate Networks
2.5
2.5
V1
In
2.5
Vi
V i-1
C
0
2.5
C
0
V n-1
V i+1
C
0
Vn
C
C
0
(a)
R eq
R eq
V1
In
R eq
Vi
C
C
R eq
V n-1
V i+1
C
Vn
C
C
(b)
m
R eq
R eq
R eq
R eq
R eq
R eq
In
C
C C
C
C
C C
C
(c)
© Digital Integrated Circuits2nd
Interconnect
Delay Optimization
© Digital Integrated Circuits2nd
Interconnect
Resistivity and Performance
 The signal delay in interconnect has been dominated by
RC if the signal frequency is not too high.
 In modern design, average length of global wires has
been increasing.
 At the same time, the average delay of individual gate
goes down (since parasitics reduces).
 This leads to a strange situation that it may take multiple
clock cycles to transport a global signal to long distance.
 Accurate synchronization becomes a big challenge (the
timing issues we discussed before).
© Digital Integrated Circuits2nd
Interconnect