Transcript MonolithIC 3D ICs

MonolithIC 3D ICs
November 2012
MonolithIC 3D Inc. , Patents Pending
MonolithIC 3D Inc. , Patents Pending
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Monolithic 3D RC-JLT
(Recessed-Channel Junction-Less Transistor)
MonolithIC 3D Inc. Patents Pending
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Technology
Monolithic 3D IC technology is applied to producing monolithically stacked low
leakage Recessed Channel Junction-Less Transistors (RC-JLTs).
Junction-less (gated resistor) transistors are very simple to manufacture, and
they scale easily to devices below 20nm:
•
Bulk Device, not surface
•
Fully Depleted channel
•
Simple alternative to FinFET
Superior contact resistance is achieved with the heavier doped top layer. The
RCAT style transistor structure provides ultra-low leakage.
Monolithic 3D IC provides a path to reduce logic, SOC, and memory costs
without investing in expensive scaling down.
MonolithIC 3D Inc. Patents Pending
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RCJLT – a monolithic process flow
Using a new wafer, construct dopant regions in top ~100nm
and activate at ~1000ºC
Oxide
~100nm
Wafer, ~700µm
N+
N++
P-
MonolithIC 3D Inc. , Patents Pending
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Implant Hydrogen for Ion-Cut
H+
Oxide
~100nm N+
N++
Wafer, ~700µm
P-
MonolithIC 3D Inc. Patents Pending
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Hydrogen cleave plane
for Ion-Cut formed in donor wafer
Oxide
N+
~100nm
N++
Wafer, ~700µm
H+
~10nm
P-
MonolithIC 3D Inc. Patents Pending
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Flip over and bond
the donor wafer to the base (acceptor) wafer
Donor Wafer,
~700µm
P-
~100nm N++
N+
Oxide
H+
1µ Top Portion of
Base Wafer
Base Wafer,
~700µm
MonolithIC 3D Inc. Patents Pending
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Perform Ion-Cut Cleave
N++
~100nm N+
Oxide
1µ Top Portion of
Base Wafer
MonolithIC 3D Inc. Patents Pending
Base Wafer
~700µm
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Complete Ion-Cut
~100nm
N++
N+
Oxide
1µ Top Portion of
Base Wafer
MonolithIC 3D Inc. Patents Pending
Base Wafer
~700µm
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Etch Isolation regions as the first step to define
RCAT transistors
~100nm
N++
N+
Oxide
1µ Top Portion of
Base Wafer
MonolithIC 3D Inc. Patents Pending
Base Wafer
~700µm
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Fill isolation regions (STI-Shallow Trench
Isolation) with Oxide, and CMP
~100nm N++
N+
Oxide
1µ Top Portion of
Base Wafer
MonolithIC 3D Inc. Patents Pending
Base Wafer
~700µm
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Etch RCAT Gate Regions
Gate region
~100nm
N++
N+
Oxide
1µ Top Portion of
Base Wafer
MonolithIC 3D Inc. Patents Pending
Base Wafer
~700µm
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Form Gate Oxide
~100nm
N++
N+
Oxide
1µ Top Portion of
Base Wafer
MonolithIC 3D Inc. Patents Pending
Base Wafer
~700µm
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Form Gate Electrode
~100nm
N++
N+
Oxide
1µ Top Portion of
Base Wafer
MonolithIC 3D Inc. Patents Pending
Base Wafer
~700µm
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Add Dielectric and CMP
~100nm
N++
N+
Oxide
1µ Top Portion of
Base Wafer
MonolithIC 3D Inc. Patents Pending
Base Wafer
~700µm
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Etch Thru-Layer-Via and
RCJLT Transistor Contacts
~100nm
N++
N+
Oxide
1µ Top Portion of
Base Wafer
MonolithIC 3D Inc. Patents Pending
Base Wafer
~700µm
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Fill in Copper
~100nm
N++
N+
Oxide
1µ Top Portion of
Base Wafer
MonolithIC 3D Inc. Patents Pending
Base Wafer
~700µm
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Add more layers monolithically
~100nm
~100nm
N++
N+
Oxide
N++
N+
Oxide
1µ Top Portion of
Base (acceptor) Wafer
Base Wafer
~700µm
MonolithIC 3D Inc. Patents Pending
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Benefits for RCJLT
• 2x lower power
• 2x smaller silicon area
• 4x smaller footprint
• Layer to layer interconnect density at close to full lithographic resolution
and alignment
• Performance of single crystal silicon transistors on all layers in the 3D IC
• Scalable: scales naturally with equipment capability
• Forestalls next gen litho-tool risk
• Also useful as Anti-Fuse FPGA programming transistors: programmable
interconnect is 10x-50x smaller & lower power than SRAM FPGA
• Base logic circuits could be UT-BBOX, FinFET, or JLT CMOS logic devices
MonolithIC 3D Inc. Patents Pending
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RC-JLT flow: Summary
Create a layer of Recessed Channel Junction-Less Transistors (RC-JLTs), a
junction-less version of the RCAT used in DRAMs, by activating dopants at
~1000°C before wafer bonding to the CMOS substrate and cleaving, thereby
leaving a very thin doped stack layer from which transistors are completed,
utilizing less than 400°C etch and deposition processes.
MonolithIC 3D Inc. Patents Pending
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