IEEE NSS-MIC 2011, Valencia, Spain
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Transcript IEEE NSS-MIC 2011, Valencia, Spain
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IEEE NSS-MIC 2011, Valencia, Spain
Large Area Ultra-Thin Detector Ladders based on
CMOS Monolithic Pixel Sensors
Wojciech Dulinski
IPHC Strasbourg, France
on behalf of PLUME, SERVIETTE and CERNVIETTE Collaborations
Outline
Short status of MAPS development at IPHC
PLUME: the lightweight ladder based on standard flex PCB
SERVIETTE and CERNVIETTE: ultra-thin chip
embedding in plastics project (two different process approach)
Conclusions and prospects
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Monolithic Active Pixel Sensor: effective use of a thin
epitaxial layer (10 – 20 µm) for MIP tracking
R.T.
past
present
Industrial availability of high resistivity
substrate (epi) in a standard CMOS
process
Fast and more efficient charge collection
radiation tolerant MAPS
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Present status of MAPS: just two examples of mature designs
Binary, sparsified readout sensor for EUDET beam telescope
> 2 cm2 active area, 0.7 Mpixel tracker
- Medium speed readout (100 µm integration 10 kFrame/s)
- Spatial resolution < 4 µm for a pitch of 18.4 µm
- Efficiency for MIP > 99.5 %
- Fake hit rate < 10-6
- Radiation hardness > 1013 n/cm2 (high resistivity epi substrate)
- Easy to use, “off-shell” product: used already in several application
Mimosa 26
Ultimate: 4 cm2 sensor for STAR Microvertex upgrade
- similar measured tracking performance as Mimosa26
- Radiation hardness >1014 n/cm2 with CMOS MAPS
attainable?
First indications: yes!
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One of the main feature of MAPS
Potentially extremely thin (~25 µm of
silicon in total, ~0.027 % X0), flexible (!)
and still fully efficient for MIP
tracking!
Problem: how to handle, interconnect and at the end built a low
mass ladder with such a thin device?
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First real scale exercise: new STAR Microvertex Detector
Data taking (1/4 of detector) expected in 2013, full detector installation in 2014
Estimated 0.37% X0/ladder. Can we do better?
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Three RD mini-collaborations initiated by IPHC ~2 years ago,
in order to develop new methods of ultra-thin ladders construction
PLUME, SERVIETTE and CERNVIETTE Collaborations
1IPHC/IN2P3
Strasbourg, France
5University of Bristol, UK
6DESY, Hamburg, Germany
7University of Oxford, UK
2IMEC, Leuven, Belgium
3CMST, University of Gent, Belgium
4IFK, Goethe University, Frankfurt/M, Germany
8CERN, Geneva
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PLUME concept: double-sided ladder (ILC compatible)
- 2x6 Mimosa26 sensors thinned down to 50 µm
- Standard double-side kapton PCB: Cu conductor (20 µm/layer)
- SiC foam (8%) for spacer between layers
- Estimated 0.6 % X0/two sensor layers
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PLUME prototype: assembling steps
bare low mass cable
module with 6 sensors
complete ladder
(2 modules)
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Heat dissipation: moderate air blow seems to solve a lot of
“hot spots” problems
Electrical parameters (threshold dispersion, fake hit rate) almost unchanged…
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Current status of PLUME prototype:
ready for beam tests next week!
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SERVIETTE project: use of UTCP by IMEC…
Stands for :
ULTRA THIN FILM CHIP PACKAGING
In short :
Off-the-shelf die
Thinned down to ± 20-30 µm
Polyimide 2
Packaged between two polyimide foils
Metallisation : fan-out
Circuit contact through vias
Polyimide 1
Result :
Flexible package, no wire bonding
Thin : 50-70 µm
Embeddable in commercial
flexible PCB
- Partner restricted
PTW Oct. 2010 - HUMAN++
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UTCP flow: overview
• Chip
thinning
• Polyimide on
rigid carrier with
release layer (KCl)
• Dispense/spin
of BCB
•Placement (face up) of IC
60 mm
•Photo definable polyimide
spinning (20µm))
• Opening vias using lithography
• Cleaning of contact pads
• Metallization: TiW (50nm) + Cu(1µm)
• Electroplating : Cu (5µm)
• Lithography to pattern metal
• Encapsulation polyimide spinning
• Release from carrier
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First results: Mimosa18 mechanical grade sample
Submitted for fabrication more than
a year ago, very slow progress since, on stand-by
till thinned chip placement problems solved.
Aluminum conductor, multiple metal layers and
multiple chips still far ahead…
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CERNVIETTE: use of a “standard” flex PCB process for
chip embedding in plastic foils (Rui de Oliveira, Serge Ferry)
• Gluing between two kapton foils
• Opening vias using lithography
• Single module:
intermediate tests
• Metallization: Al (5-10 µm)
• Lithography to pattern metal
• Complete ladder assembling,
laser cut along sensor edges
• Gluing of another kapton foil for
deposition of second metal layer
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CERNVIETTE: stack formation
Copper
150 µm
Polyimide
Silicon
chip
Acrylic glue
Polyimide
Acrylic glue
Copper substrate 1.5mm
Thin layer of epoxy
glue 3 to 10 µm
acrylic glue 60 µm
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CERNVIETTE: processing steps
1-Gluing at 200 deg, 22kg/cm2 under vacuum
2-Photolithographic method and chemical etching by ethylene diamine to
create vias on top of bonding pads
3-Plasma etching of glue in vias
4-Aluminium coating by sputtering deposition in vacuum machine
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CERNVIETTE: processing steps
5-Photolithographic method and etching with phosphoric acid to pattern
aluminium layer (strip, pads).
Step 1 to 5 can be repeated to create more metal layers and interconnexions
6-Chemical Etching of copper substrate
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CERNVIETTE: solid state flexible sensor wrapped over
cylindrical shape (R=20 mm) and pretty well protected
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Major failure: too short plasma etching of glue layer,
no electrical contacts… But excellent metal adhesion
and thickness uniformity!
Second (corrected) iteration expected to be ready next week
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CERNVIETTE: details of 4 metal layer flex (~0.12% X0)
Impedance of readout lines (last metal, 100 µm width,
100 µm gap) as a function of kapton thickness: 100 Ω
for 60 µm thick kapton (last layer)
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Conclusions
-
Construction methods of ultra-light sensor ladders are progressing rapidly, embedding in
polymer seems to be a new interesting option
-
It is at present our preferred solution in order to take full profit from MAPS high precision
tracking performances AND to equip with a reasonable budget large area detectors
(replacement of silicon strips, tracking calorimeters…)
Outlook
-
Double-sided PLUME module (0.6 % X0) fully operational, ready for beam tests starting next
month. The next version (Al instead of Cu conductor, less dense SiC foam 0.3 % X0) in
2012
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Second iteration of single Mimosa26 embedded in kapton (CERNVIETTE) next week, full
PLUME compatible ladder (six M26) planned for beginning of the next year
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CERNVIETTE process may by much less critical, if the last metal layer on the chip is used
for better (less dense) “bonding pads” distribution 7 metal CIS 0.18 µm process available!
-
Start to think about stitching exercise: wafer scale, up to 10x10 cm2 monolithic sensor possible
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