Transcript NECSA-TBx

Implantation of N-O in Diamond
T.Matindi, Dr. S.R. Naidoo
DST-NRF Centre of Excellence in Strong Materials
Diamond, Thin Hard Films & Related Materials
Outline
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Introduction
Aim and objectives
Experimental techniques
Characterization techniques
Summary and conclusions
Introduction
• Properties of diamond :
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Large energy gap around 5.5 eV.
High carrier mobilities.
High breakdown field strength.
Highest thermal conductivity.
Low dielectric constant.
Broad optical transparency from UV to IR
Some potential application of diamond
Function
Field of application
High temperature semiconductor
Automobile and aircraft engines
High frequency/high power transistors
High speed transistors, High speed data
process
High voltage transistors
Electric power control
X-ray windows
IR windows
X-ray lithography masks and IR
windows
Light emission
LEDs and laser in UV region, white
luminescence and light source for
printers.
Pressure sensing
Pressure sensor at high temperature
Conditions for manufacturing diamondbased electronic devices
 P-type doping diamond (achieved using boron as an
acceptor impurity)
 N-type doping diamond (achieved using
phosphorus)
 Shallow dopants (both are substitutional dopants
and are deep lying acceptor and donor states.)
The doping of diamond
N-doping
Phosphorus
Nitrogen
P-doping
Boron
Activation energies for some impurities in diamond.
Theoretical work
• Substitution of N-O into the diamond lattice is
suggested to induce a shallow defect level below
the conduction band edge which leads to n-type
conductivity [1].
[1]. J. Lowther, “Substitutional oxygen-nitrogen pair in diamond,” Physical Review B, vol. 67, no. 11, p. 115206,
2003.
Aim and objectives
• To explore the possibility of achieving n-type conductivity
in diamond.
• To do the implantation of N-O into the diamond lattice.
• To investigate the interaction between nitrogen and oxygen
in the diamond as well the related defects.
Experimental techniques
Ion implantation:
 The 200-20A2F ion implanter (iThemba LABS, Gauteng)
 Ions : Nitrogen and Oxygen.
 Energy range : from 10 keV to 170 keV.
 Fluences ranging: from 1.0 × 1015 ions/ cm2 to 5.0 × 1015
ions/cm2 .
Characterization techniques
• Optical spectroscopy.
• Electronic measurements.
Summary and conclusions
• To explore the possibility of achieving n-type
conductivity in diamond.
• To do the implantation of N-O into the diamond
lattice.
• To investigate the interaction between nitrogen
and oxygen in the diamond as well the related
defects.
• Optical spectroscopy and electronic measurements
Thank you
Merci
Setup for the generation of the
VUV laser light