CMOS Power Dissipation
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Transcript CMOS Power Dissipation
EE466: VLSI Design
Power Dissipation
Outline
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Motivation to estimate power dissipation
Sources of power dissipation
Dynamic power dissipation
Static power dissipation
Metrics
Conclusion
Need to estimate power dissipation
Power dissipation affects
• Performance
• Reliability
• Packaging
• Cost
• Portability
Where Does Power Go in CMOS?
• Dynamic Power Consumption
Charging and Discharging Capacitors
• Short Circuit Currents
Short Circuit Path between Supply Rails during Switching
• Leakage
Leaking diodes and transistors
Node Transition Activity and Power
•Due to charging and discharging of capacitance
Consider switching a CMOS gate for N clock cycles
E N = CL V dd2 n N
EN : the energy consumed for N clock cycles
n(N ): the number of 0->1 transition in N clock cycles
EN
2
n N
P avg = lim -------- fclk = lim ----------- C Vdd f clk
N N
N N
L
0 1 =
n N
lim -----------N N
P avg = 0 1 C Vdd 2 f clk
L
Activity factors of basic gates
• AND
• OR
• XOR
(1 p A pB ) p A pB
(1 p A )(1 pB )[1 (1 p A )(1 pB )]
[1 ( p A pB 2 p A pB )]( p A pB 2 p A pB )
Dynamic Power dissipation
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Power reduced by reducing Vdd, f, C and also activity
A signal transition can be classified into two categories
a functional transition and
a glitch
Glitch Power Dissipation
• Glitches are temporary changes in the value of the
output – unnecessary transitions
• They are caused due to the skew in the input signals to a
gate
• Glitch power dissipation accounts for 15% – 20 % of the
global power
• Basic contributes of hazards to power dissipation are
– Hazard generation
– Hazard propagation
Glitch Power Dissipation
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P = 1/2 .CL.Vdd . (Vdd – Vmin) ;
Vmin : min voltage swing at the output
Glitch power dissipation is dependent on
– Output load
– Input pattern
– Input slope
Glitch Power Dissipation
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Hazard generation can be reduced by gate sizing and
path balancing techniques
Hazard propagation can be reduced by using less
number of inverters which tend to amplify and
propagate glitches
Short Circuit Power Dissipation
• Short circuit current occurs during signal transitions
when both the NMOS and PMOS are ON and there is a
direct path between Vdd and GND
• Also called crowbar current
• Accounts for more than 20% of total power dissipation
• As clock frequency increases transitions increase
consequently short circuit power dissipation increases
• Can be reduced :
– faster input and slower output
– Vdd <= Vtn + |Vtp|
• So both NMOS and PMOS are not on at the same time
Static Power Consumption
Vd d
Istat
Vout
Vin =5V
CL
Pstat = P(In=1) .Vdd . Istat
• Dominates over dynamic consumption
Wasted energy …
• Not a function of switching frequency
Should be avoided in almost all cases
Static Power Dissipation
• Power dissipation occurring when device is in standby
mode
• As technology scales this becomes significant
• Leakage power dissipation
• Components:
– Reverse biased p-n junction
– Sub threshold leakage
– DIBL leakage
– Channel punch through
– GIDL Leakage
– Narrow width effect
– Oxide leakage
– Hot carrier tunneling effect
Principles for Power Reduction
• Prime choice: Reduce voltage!
– Recent years have seen an acceleration in
supply voltage reduction
– Design at very low voltages still open
question (0.6 … 0.9 V by 2010!)
• Reduce switching activity
• Reduce physical capacitance
– Device Sizing
Factors affecting leakage power
• Temperature
– Sub-threshold current increases exponentially
• Reduction in Vt
• Increase in thermal voltage
– BTBT increases due to band gap narrowing
– Gate leakage is insensitive to temperature change
Factors affecting leakage power
• Gate oxide thickness
– Sub-threshold current decreases in long channel transistors and
increases in short channel
– BTBT is insensitive
– Gate leakage increases as thickness reduces
Solutions
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MTCMOS
Dual Vt
Dual Vt domino logic
Adaptive Body Bias
Transistor stacking
Metrics
• Power Delay product
• Energy Delay Product
– Average energy per instruction x average inter
instruction delay
• Cunit_area
– Capacitance per unit area
Conclusion
• Power dissipation is unavoidable especially as
technology scales down
• Techniques must be devised to reduce power dissipation
• Techniques must be devised to accurately estimate the
power dissipation
• Estimation and modeling of the sources of power
dissipation for simulation purposes