Transcript Slides - indico.jinr.ru – Indico

Belarusian State University, Minsk, Belarus
Correction of properties and synthesis of
metal-semiconductor-dielectric (MSD)
nanocomposite electronic structures
using ion-beam technologies
Prof. Alexander Fedotov
Belarusian State University
Minsk, Belarus
Co-Authors:
J. Fedotova, RI for Nuclear Problems of BSU, Minsk, Belarus
E.A. Streltsov, BSU , Minsk, Belarus
P.V. Zukowski, Lublin Technical University, Lublin, Poland
Yu.E. Kalinin, Voronezh State Technical University, Voronezh, Russia
S.I. Tyutyunnikov, JINR, Dubna, Russia
P.Yu. Apel, JINR, Dubna, Russia
Belarusian State University, Minsk, Belarus
As to material science, the main tasks in context of
NICA project is how to use ion technologies for :
1. production of new nanostructured materials;
Belarusian State University, Minsk, Belarus
As to material science, the main tasks in context of
NICA project is how to use ion technologies for :
1. production of new nanostructured materials;
2. production of nanodevices;
Belarusian State University, Minsk, Belarus
As to material science, the main tasks in context of
NICA project is how to use ion technologies for :
1. production of new nanostructured materials;
2. production of nanodevices;
3. correction of materials properties;
4. etc.
Belarusian State University, Minsk, Belarus
Presentation contains 4 parts:
1. MSI films and structures based on SHI technology
which are close to application (looking-for
applications people).
Belarusian State University, Minsk, Belarus
Presentation contains 4 parts:
1. MSI films and structures based on SHI technology
which are close to application (looking-for
applications people).
2. Proposals for the use of irradiation (SHI, electrons,
protons, neutrons, etc.) for the formation of
nanodevices.
Belarusian State University, Minsk, Belarus
Presentation contains 4 parts:
1. MSI films and structures based on SHI technology
which are close to application (looking-for
applications people).
2. Proposals for the use of irradiation (SHI, electrons,
protons, neutrons, etc.) for the formation of
nanodevices.
3. Proposals for the study of the influence of
irradiation (SHI, electrons, protons, neutrons, etc.) on
the properties of materials and devices.
Belarusian State University, Minsk, Belarus
Presentation contains 4 parts:
1. MSI films and structures based on SHI technology
which are close to application (looking-for
applications people).
2. Proposals for the use of irradiation (SHI, electrons,
protons, neutrons, etc.) for the formation of
nanodevices.
3. Proposals for the study of the influence of
irradiation (SHI, electrons, protons, neutrons, etc.) on
the properties of materials and devices.
4. Presentation of our equipment
Belarusian State University, Minsk, Belarus
1. MSI films and structures based on SHI technology
which are close to application (looking-for
applications people).
Belarusian State University, Minsk, Belarus
TECONASS approach
TECONASS - TEmplate-assisted Composite
Nanostructures on Semiconducting Substrates
Belarusian State University, Minsk, Belarus
TECONASS approach
Magnetosensitive Ni/SiO2/Si composite
nanostructures with Ni nanorods,
distributed in vertical pores of SiO2 layer
on Si substrate
Belarusian State University, Minsk, Belarus
TECONASS approach
TECONASS synthesis
is one of the best
approaches to form
arrays of
magnetosensitive
transdusers (sensors)
Belarusian State University, Minsk, Belarus
TECONASS approach
It is based on the
filling of vertical mesa- or
nanopores in templates by
different substances for
the formation of nanorod
arrays on semiconducting
substrates
Belarusian State University, Minsk, Belarus
TECONASS approach
is based on the filling of vertical mesa- or nanopores
in templates by different substances using SHI irradiation
technology
Ion flow
Latent tracks
SiO2
Si
SiO2
Si
Irradiation
HF etching
Si
Etched tracks
(Selective etching)
Belarusian State University, Minsk, Belarus
TECONASS approach
(а)
(б)
Top(а) and cross-section (b) views of SiO2/Si(100)templates with mesapores
______________________________________________________________________________________________________________________________________
Electrochemical deposition of Ni and Cu onto monocrystalline n-Si(100) wafers and into
nanopores in Si/SiO2 template / Yu.A. Ivanova, D.K. Ivanou, A.K. Fedotov, E.A.
Streltsov, S.E. Demyanov , A.V. Petrov, E.Yu. Kaniukov, D. Fink // J. Mater. Sci. – 2007.
– Vol. 42. – P. 9163–9169.
Belarusian State University, Minsk, Belarus
TECONASS approach
AFM image of the Ni rod array
Ni
Ni
Ni
Ni
SiO2
Si
SEM images of Ni nanorods on surface (a) and chip (b) of the
TECONASS structure after pores filling with Ni clusters
Belarusian State University, Minsk, Belarus
TECONASS approach
Magnetotransport properties
B – magnetic induction vector
I – current vector
The magnetoresponse of «bundles» of Ni nanorods in mesaporous
n-Si/SiO2 templates was studied in the temperature range 2 – 300 K and
magnetic fields up to 8 Tesla with different orientations of B and I vectors
Belarusian State University, Minsk, Belarus
TECONASS approach
Temperature dependences
of MR12 (B = 8 T) measured
at Vtr = 0 and different
working currents I12 normal
to B and Si substrate plane
Belarusian State University, Minsk, Belarus
TECONASS approach
MR = 40 000 %
400
(ii)
(i)
300
10
(8 T)
12
200
MR
MR
8
2
6
4
1
2
100
0
20
22
24
T, K
26
28
3
2 1
0
10
T, K
100
Temperature dependencies of MR12(8 T) measured at I12 = 100 nA
when transversal biases Vtr = 0 V (1), + 2 V (2) and -2 V (3) were applied.
Insert (i) - MR12(8 T) for I12 = 1000 and 100 nA at T = 20 – 20 K.
Belarusian State University, Minsk, Belarus
TECONASS approach
Resume
1. The application of a magnetic field to the n-Si/SiO2/Ni
nanostructure caused strong increase of positive magnetoresistance with its huge values of about 200 - 700 % at around 25 K at
low levels of measuring currents I12 and for Vtr = 0 V.
2. A huge positive magnetoresistive effect in the temperature
range of 20 – 30 K can be strongly enhanced (up to 40,000 %) and at
300 K (up to 500 %) when applying transversal biase voltage Vtr = -2 V.
Belarusian State University, Minsk, Belarus
TECONASS approach
Possible industrial applications is
production of 2D (planar) magnetically
sensitive matrixes for:
1. Characterization (visualization) of spatial magnetic field
distribution (magnetic tomography)
2. Study of magnetic field inhomogeneity by cross section
and by depth in channels of superconducting solenoids (at
low temperatures)
3. Study of magnetic field distribution in clearances of
magnets, magnetic coils with complicated configurations,
transformers and other magnetic devices and systems
Belarusian State University, Minsk, Belarus
TECONASS approach
Proposal for realization:
Fabrication of prototypes for magnetically sensitive
matrixes for characterization of magnetic field distribution
in magnetic systems
o h m m e te r
R
Fabrication of prototypes
for magnetically sensitive
matrixes for
characterization of
spatial distribution of
magnetic field in
magnetic systems
i n te r c o n n e c ti o n s
b a c k s id e p ro b e
Belarusian State University, Minsk, Belarus
MSI film nanocomposites with
“negative capacitance” effect at
the impedance measurements when
current is delayed as compared
with the bias voltage applied
Belarusian State University, Minsk, Belarus
“Negative capacitance” effect
is observed in nanogranular composite MSI
films containing nanoparticles
with “core-shell” structure
Belarusian State University, Minsk, Belarus
“Negative capacitance” effect
is observed in nanogranular composite MSI
films containing nanoparticles
with “core-shell” structure
Sketch of nanocomposite
Belarusian State University, Minsk, Belarus
Structure and phase composition of the MxI1-x films sintered in in Ar+O2
atmosphere : TEM, HRTEM, XRD, EXAFS, Mossbauer spectroscopy, etc.
HRTEM and TEM
images for the
(FeCoZr)x(Al2O3)1-x
nanocomposite
films
Stabilized granular structure with nanoparticle dimensions DFeCo < 6 nm
“Core-shell” nanoparticles due to selective Fe and Co oxidation
Core –FeCo(Zr) alloy with bcc crystallinr lattice;
Shell – Fe, Co-based oxides with semiconducting properties
No agglomeration of metallic nanoparticles at x > 0.70
Belarusian State University, Minsk, Belarus
“Negative capacitance” effect
L
C
f 
1
2 m
 f min
(f) curves (left) and modulo C(f) dependences (right) for
the as-deposited (FeCoZr)0.42(PZT)0.58 sample for different
measuring temperatures
Belarusian State University, Minsk, Belarus
“Effective” inductive impedance contribution
L  20 H/m3 up to 10 MHz
p-n-p heterojunctions:
Archimedean spiral:
10-3 H/m2
10-7 H/m2
Polymer nanocomposites: 10-6 H/m2
What is the next step to use this huge NC effect
for electric engineering components production
(for example, in ICs)?
Belarusian State University, Minsk, Belarus
One of possible applications in ICs:
Replacing gyrator - impedance inverter or phase shifter
Small piece of nanocomposite film
with “effective” inductive impedance
L  20 H/m3 up to 10 MHz
replaces gyrator
Belarusian State University, Minsk, Belarus
We are looking for partners
for the implementation of this idea !!!
The first basic idea of this proposal is
to use methods of planar silicon
technology to create a planar nano- and
microinductors:
1. Substitution of alumina or PZT
matrixes on the silica;
2. Formation of oxidized metallic
nanoparticles with the “core-shell”
structure in silicon oxide by ion
implantation of metallic ions in oxygencontaining atmosphere with the following
annealing procedure
Little piece of nanocomposite film
with “effective” inductive impedance
L  20 H/m3 up to 10 MHz
replaces gyrator
Belarusian State University, Minsk, Belarus
2. Proposals for the use of irradiation (SHI, electrons,
protons, neutrons, etc.) for the formation of
nanodevices.
Belarusian State University, Minsk, Belarus
The engineering of graphene-based field effect transistor (GFET)
with high-frequency performance requires opening up a Bandgap
GFET
[Frank Schwierz. "Graphene transistors". In: Nat Nano
5.7 (2010), pp. 487-496. DOI 10.1038/nnano.2010.89]
The energy dispersion close to the K-points for
(i) single-layer
(ii) nanoribbons
(iii) bilayer with zero electric field
(iv) bilayer in the presence of an electric field.
Belarusian State University, Minsk, Belarus
The engineering of graphene-based field effect transistor (GFET)
with high-frequency performance requires opening up a Bandgap
The Major Ways of
Graphene Bandgap Engineering
are using of Nanoribbons or
Nanomesh
[Frank Schwierz. "Graphene transistors". In: Nat Nano
5.7 (2010), pp. 487-496. DOI 10.1038/nnano.2010.89]
GFET
The energy dispersion close to the K-points for
(i) single-layer
(ii) nanoribbons
(iii) bilayer with zero electric field
(iv) bilayer in the presence of an electric field.
Belarusian State University, Minsk, Belarus
The engineering of graphene-based field effect transistor (GFET)
with high-frequency performance requires opening up a Bandgap
The Major Ways of
Graphene Bandgap Engineering
are using of Nanoribbons or
Nanomesh
GFET
But nanoribbons are not compatible
with the current complementary CMOS
lithographic process
[Frank Schwierz. "Graphene transistors". In: Nat Nano
5.7 (2010), pp. 487-496. DOI 10.1038/nnano.2010.89]
The energy dispersion close to the K-points for
(i) single-layer
(ii) nanoribbons
(iii) bilayer with zero electric field
(iv) bilayer in the presence of an electric field.
Belarusian State University, Minsk, Belarus
The best way is the formation of
Graphene Nanomesh (GNM)
with periodic distribution of holes in graphene
Transistor with graphene nanomesh
[Jingwei Bai et al. "Graphene nanomesh". In : Nat Nano 5.3
(2010), pp. 190-194. DOI:10.1038/nnano.2010.8]
Belarusian State University, Minsk, Belarus
The best way is the formation of
Graphene Nanomesh (GNM)
with periodic distribution of holes in graphene
Transistor layout with graphene nanomesh
periodicity
Advantages of Graphene Nanomesh Use:
 Nanomeshes support higher currents than nanoribbons.
 Compatible with the current fabrication process.
neck width
 Electric properties are total controlled by the periodicity
and the neck width.
[Jingwei Bai et al. "Graphene nanomesh". In : Nat Nano 5.3
(2010), pp. 190-194. DOI:10.1038/nnano.2010.8]
Belarusian State University, Minsk, Belarus
The best Method of Graphene
Nanomesh (GNM) Fabrication
is the use of irradiation by protons
and heavy ions (up to gold) with
extreme energies (GeV)
The potential applications for GNM are a new generation of
spintronics, chemical sensing, supercapacitors, DNA
sequencing, photothermal therapy.
Belarusian State University, Minsk, Belarus
3. Proposals for the study of the influence of SHI
irradiation on the properties of materials and devices.
Belarusian State University, Minsk, Belarus
Graphene irradiated by swift heavy ions
Graphene structure modification using controlled defect induction, to control
the mean free path length of the charge carriers and the conductivity
G
Xe, 160 MeV
D
2D
ion fluence:
FWHM = 43 cm-1
1011 cm-2
Intensity, arb. un.
D'
FWHM = 38 cm-1
109 cm-2
FWHM = 35 cm-1
108 cm-2
FWHM = 33 cm-1
1200
1500
1800
2100
Raman Shift, cm-1
2400
pristine
2700
Basic mechanisms of defect formation:
• substrate sputtering
• hot electrons produced near the interface
• recoil atoms of substrate
Interdefect distance
Belarusian State University, Minsk, Belarus
Influence of SHI irradiation on phase composition in (FeCoZr)73(CaF2)27
initial
irradiated
100,0
Transmission (%)
99,8
99,6
99,4
99,2
-10
99,8
99,6
99,4
12
(FeCoZr)74(CaF2)26
-5
0
5
2
D = 710 ion/cm
99,2
-9
-6
-3
0
3
6
9
Velocity (mm/s)
10
Velocity (mm/s)
metal : oxide ~ 60 : 40
metal : oxide ~ 40 : 60
100,0
α-FeCo(Zr)
Transmission (%)
Transmission (%)
100,0
99,5
13
2
D = 2.510 ion/cm
99,0
α-Fe2O3
-9
-6
-3
0
3
Velocity (mm/s)
6
9
Belarusian State University, Minsk, Belarus
We also offer a study the effect of irradiation of highenergy particles on
• the properties of coatings for protection of electronic
devices using a bismuth-based films;
Belarusian State University, Minsk, Belarus
We also offer a study the effect of irradiation of highenergy particles on
• the properties of coatings for protection of electronic
devices using a bismuth-based films;
• the degradation of high-temperature materials for
thermoelectric generators for spacecrafts for deep
space;
Belarusian State University, Minsk, Belarus
We also offer a study the effect of irradiation of highenergy particles on
• the properties of coatings for protection of electronic
devices using a bismuth-based films;
• the degradation of high-temperature materials for
thermoelectric generators for spacecrafts for deep
space;
• the degradation of characteristics
superconducting cables used in a
accelerator system of colliding beams
of the
magnetic
Belarusian State University, Minsk, Belarus
4. Presentation of our equipment
Belarusian State University, Minsk, Belarus
Confocal spectrometer for micro-Raman and micro-PL
analysis “Nanofinder HE” (LOTIS-TII, Belarus – Japan):
• Close-cycle cryostat (down to 20 K)
• 4 excitation lasers (355, 473, 532 and 785 nm);
• Spectral resolution as good as 0.01 nm;
• Spatial resolution as good as 200 nm (lateral)/500 nm (vertical) at 300 K;
Defect distribution in Graphene
Belarusian State University, Minsk, Belarus
Closed-cycle cryogen-free measuring system (Cryogenic Ltd., London):
Temperature range 1.7 – 305 K with temperature stabilization  0.005 K per hour;
Magnetic field up to 8 T in semiconductor solenoid with internal diameter 28 mm;
DC and AC (20 Hz – 30 MHz) measurements of I-V, resistance, Hall effect;
Voltage source from 5 µV to 210 V; measurable voltage from 10 pV to 211 V;
Current source from 0.5 fA to 105 mA; measurable current from 10 aA to
105.5 mA.
Measurable resistance from 100 µΩ (<100µΩ in manual ohms) to 21.1 TΩ.
•
•
•
•
•
•
0,20
0,20
1
1
0,15
0,10
2
0,05
R/R0
R/R0
0,15
2
0,10
0,05
3
0,00
4
5
6
-0,05
7
8
3
0,00
4
5
6
-0,05
7
9
10
-8
-6
-4
-2
0
B, T
2
4
6
8
-8
-6
-4
-2
0
2
4
B, T
(а)
(б)
Magnetoresistance of the 2D electronic gas in delta-layer in Si
before (a) and after (b) SHI exposure at different temperatures:
1 – 300 K; 2 – 200 K; 3 – 150 K; 4 - 100K; 5 – 50 K; 6 - 25 K;
7 – 10 K; 8 - 8 K; 9 – 5 K; 10 - 2K
6
8
Belarusian State University, Minsk, Belarus
Closed-cycle cryogen-free measuring system (Cryogenic Ltd., London) for
the study of magnetic, thermal and thermoelectric properties in the
temperature range 1.7 – 305 K and magnetic fields up to 8 T:
•
•
•
•
Seebeck effect;
Thermal conductance;
Vibrating Sample Magnetometer with ZFC- and NZFC-regimes;
Low-frequency Magnetoimpedance.
a
b
Seebeck coefficient S(T) of
Bi-Sn alloys depending on
temperature T at magnetic
fields B =0 (a) and B = 8 T (b)
Belarusian State University, Minsk, Belarus
UV-Vis-IR spectrometer MC122 (Proscan Special Instruments):
• Spectral range from 190 to 1100 nm;
• Absorption, reflection;
• Photocurrent spectra.
Belarusian State University, Minsk, Belarus
Mössbauer spectrometer with closed-cycle refrigeration system (Janis):
•
•
Allows to make measurements in the temperature range 4 – 300 К with precise
control of temperature;
Allows to realize measurements in the transmission and reflection modes.
Mossbauer spectra of (FeCoZr)x(CaF2)1-x (29 < x < 73 at.%)
in granular films deposited on Al foil in Ar (a) and Ar + O2
at PO = 4.3 mPa (b) atmospheres
Belarusian State University, Minsk, Belarus
Fedotov A.K.
[email protected]
Thank you
for attention
Belarusian State University, Minsk, Belarus
Ion-beam sputtering of nanogranular composite MxI1-x films
6
9
8
Chamber for deposition of films
4
6
7
2
1
3
5
1 – vacuum chamber
2 – circling drum for substrates
3 – sputtered targets
4 – ion-beam source
5 – source for ion-beam cleaning
6 – compensators
7 – dielectric substrates
8 – ion beams
9 – sputtered ions
4
8
9
Variable regimes:
Substrate temperature
Composition of target
Atmosphere of deposition
Compound target
Belarusian State University, Minsk, Belarus
“Negative capacitance” effect: hopping model
E=0
P. Żukowski, T. Kołtunowicz, J. Partyka, Yu.A. Fedotova,
A.V. Larkin, Vacuum, 83 (2009) S280-S283.
Nanoparticles are neutral potential wells
before bias voltage application
Belarusian State University, Minsk, Belarus
“Negative capacitance” effect: hopping model
E=0
P. Żukowski, T. Kołtunowicz, J. Partyka, Yu.A. Fedotova,
A.V. Larkin, Vacuum, 83 (2009) S280-S283.
Nanoparticles are neutral potential wells
before bias voltage application
E>0
Jump of electron between two wells
Violation of electro neutrality &
formation of dipole
Polarization of I matrix & growth
of the e- lifetime m on the well
Belarusian State University, Minsk, Belarus
“Negative capacitance” effect: hopping model
P. Żukowski, T. Kołtunowicz, J. Partyka, Yu.A. Fedotova,
A.V. Larkin, Vacuum, 83 (2009) S280-S283.
E=0
Nanoparticles are neutral potential wells
before bias voltage application
Jump of electron between two wells
E>0
Violation of electro neutrality &
formation of dipole
Polarization of I matrix & growth
of the e- lifetime m on the well
Equations:
jr  E0 sinωt(1  cosω  2pcosω )
jr ~ f  (f)
f L ( ) 
G  f   Go f

 t  1
 t 
exp  
 exp  
 2
 
 2 2
1
E  300 meV
m  10-3 – 10-4 s
f 

 

1
 f min
2 m
Belarusian State University, Minsk, Belarus
“Negative capacitance” effect: hopping model
E=0
P. Żukowski, T. Kołtunowicz, J. Partyka, Yu.A. Fedotova,
A.V. Larkin, Vacuum, 83 (2009) S280-S283.
E>0
For f > fmin we observe the phase
delay 2fm of current as
compared with voltage biase
applied.
This creates the possibility for positive angles of
the phase shifts  and properly NC effect
(domination of inductive-like contribution to
impedance of the films).
Belarusian State University, Minsk, Belarus
“Negative capacitance” effect
Planar miniature non-coil-like inductors for ICs
6
1
5
4
4
2
3
1 – sputtered
Our main result:
nanocomposite film,
2 – insulating layer , “Effective” inductive impedance contribution
L  20 H/m3 up to 10 MHz
3 – base silicon
substrate,
4 – metallic contacts,
p-n-p heterostructures: 10-3 H/m2
5 – photomask,
6 – flux of sputtered
Archimedean spiral:
10-7 H/m2
atoms
Polymer nanocomposites: 10-6 H/m2
Patent applications:
Non coil-like inductivities for microelectronic schemes, Polish patent P.399392 (2012)
Capacitor-inductivity scheme for electronic devices, Polish patent P.39039 (2010)