Transcript Document

Atomic model
Semi-classical view of atom excitations
Energy
Atom in ground state
Energy
Atom in excited state
MIT 2.71/2.710 Optics
10/20/04 wk7-b-21
Absorption
Spontaneous emission
Stimulated emission
Boltzmann’s equation
E2
n2
 ( E2  E1 ) 
 exp 

n1
kT


• n1 - the number of electrons of
energy E1
• n2 - the number of electrons of
energy E2
E1
example: T=3000 K
E2-E1=2.0 eV
n2
 4.4 104
n1
Einstein’s theory of spontaneous and
stimulated emission
Einstein’s coefficients
Probability of stimulated absorption R1-2
R1-2 = r (n) B1-2
E2
E1
Probability of stimulated and spontaneous emission :
R2-1 = r (n) B2-1 + A2-1
assumption: n1 atoms of energy e 1 and n2 atoms of energy e 2 are in
thermal equilibrium at temperature T with the radiation of spectral
density r (n):
n1 R1-2 = n2 R2-1

n1r (n) B1-2 = n2 (r (n) B2-1 + A2-1)
A21 / B21
r n  =
n1 B1 2
1
n2 B21
According to Boltzman statistics:
r (n) =
n1
 exp( E2  E1 ) / kT  exp(hn / kT )
n2
A21 / B21
B1 2
hn
exp( )  1
B21
kT
=
8hn 3 / c 3
exp( hn / kT )  1
Planck’s law
B1-2/B2-1 = 1
A21 8hn 3

B21
c3
The probability of spontaneous emission A2-1 /the probability of stimulated
emission B2-1r(n :
A21
 exp(hn / kT )  1
B21r (n )
1.
Visible photons, energy: 1.6eV – 3.1eV.
2.
kT at 300K ~ 0.025eV.
3. stimulated emission dominates solely when hn/kT <<1!
(for microwaves: hn <0.0015eV)
The frequency of emission acts to the absorption:
n A  n B r (n )
A21 n2 n2
x  2 21 2 21
 [1 
] 
n1B12 r (n )
B21r (n ) n1 n1
if hn /kT <<1.
x~ n2/n1
Population inversion
For lasing action
• Active medium
• Pumping mechanism
– Optical
– Electrical discharge
– Chemical pumping
• Optical resonator Resonator
Laser characteristics
Carbon Di Oxide LASER
Principle
The transition between the rotational and vibrational energy levels lends to the
construction of a molecular gas laser. Nitrogen atoms are raised to the excited
state which in turn deliver energy to the CO2 atoms whose energy levels are close
to it. Transition takes place between the energy levels of CO2 atoms and the laser
beam is emitted.
Type
:
Molecular gas laser
Active Medium
:
Mixture of CO2, N2, He or H2O vapour
Active Centre
:
CO2
Pumping Method
:
Electric Discharge Method
Optical Resonator
:
Gold mirror or Si mirror coated with Al
Power Output
:
10 kW
Nature of Output
:
Continuous or pulsed
Wavelength Emitted
:
9.6 μm or 10.6 μm
Symmetric
100
C - stationary
O - vibrates
simultaneously
along molecular
axis
Bending
010, C & O vibrate
020 perpendicular to
molecular axis
Asymmetric 001, C & O atoms
Stretching
002 vibrate in opposite
directions along
molecular axis
Applications
• Bloodless surgery
• Open air
communication
•
Military field
Nd (Neodymium) – YAG (Yttrium Aluminium Garnet) LASER
Principle
Doped Insulator laser refers
to yttrium aluminium
garnet doped with
neodymium. The Nd ion
has many energy levels
and due to optical
pumping these ions are
raised to excited levels.
During the transition
from the metastable state
to E1, the laser beam of
wavelength 1.064μm is
emitted
Characteristics
Type
:
Doped Insulator Laser
Active Medium
:
Yttrium Aluminium Garnet
Active Centre
:
Neodymium
Pumping
Method
:
Optical Pumping
Pumping
Source
:
Xenon Flash Pump
Optical
Resonator
:
Ends of rods silver coated
Two mirrors partially and
totally reflecting
Power Output
:
20 kWatts
Nature of
Output
:
Pulsed
Wavelength
Emitted
:
1.064 μm
Nd (Neodymium) – YAG (Yttrium Aluminium Garnet)
LASER
M1– 100%
reflector mirror
M2 – partial
reflector mirror
Laser Rod
Flash Tube
Capacitor
Resistor
Power Supply
Energy Level Diagram of Nd– YAG LASER
E3
Non radiative decay
E2
E4
E1
Laser
1.064μm
Non radiative decay
Nd
E0
E1, E2, E3 – Energy levels of Nd
E4 – Meta Stable State
E0 – ground State Energy Level
Applications
Transmission of signals over large distances
Long haul communication system
Endoscopic applications
Remaote sensing
HOMOJUNCTION SEMICONDUCTOR LASER
(Ga-As Laser)
Principle
• The electron in the
conduction band combines
with a hole in the valence
band
and
the
recombination
produces
radiant energy. This photon
induces another electron in
the CB to combine with a
hole in the VB and thereby
stimulate the emission of
another photon.
Type
:
Homojunction Semiconductor
laser
Active Medium
:
P – N junction
Active Centre
:
Recombination of electrons and
holes
Pumping
Method
:
Direct Pumping
Optical
Resonator
:
Polished junction of diode
Power Output
:
1 mW
Nature of
Output
:
Continuous or pulsed
Wavelength
Emitted
:
8400 – 8600 Angstrom Units
P- and N-type Semiconductors
•
In the compound GaAs, each gallium atom has three electrons in its outermost
shell of electrons and each arsenic atom has five. When a trace of an impurity
element with two outer electrons, such as zinc, is added to the crystal. The result
is the shortage of one electron from one of the pairs, causing an imbalance in
which there is a “hole” for an electron but there is no electron available. This
forms a p-type semiconductor.
•
When a trace of an impurity element with six outer electrons, such as selenium,
is added to a crystal of GaAs, it provides on additional electron which is not
needed for the bonding. This electron can be free to move through the crystal.
Thus, it provides a mechanism for electrical conductivity. This type is called an ntype semiconductor.

Reverse-biased pn Junction
A reverse bias widens the depletion region, but allows minority carriers to move freely with the applied field.
Optical Fiber communications, 3rd ed.,G.Keiser,McGrawHill, 2000
Forward-biased pn Junction
Lowering the barrier potential with a forward bias allows majority carriers to diffuse across the junction.
Optical Fiber communications, 3rd ed.,G.Keiser,McGrawHill, 2000
Applications
• Compact & used in fibre optic communications
• CD writer
• Relieves pain
• Laser printers
Excimer LASER
• Excited dimer
Excimer
Function
Chemicals
Characteristic
applications
Organic Dye
Chemicals
Function
Characteristic
applications
– Short lived molecule formed from one or two
species, at least one of which is in an
electronically excited state
– May not be stable in ground state
• Excimer LASER:
– Electron pumped LASER
– Dimer (excimer)/complex (exciplex) formation
– LASER radiation: relaxation from excited state
dimer to ground state
Excimer
Excimer
Function
Chemicals
Characteristic
applications
Organic Dye
Chemicals
Function
Characteristic
applications
e- + A → A*
A* + B → AB* → AB + hν
Immediately
AB → A + B
Two important facts:
1. The lower state does not exist!
2. No rotational/vibrational bands
Excimer LASER
Energy states of an excimer
Excimer
Function
Chemicals
Characteristic
applications
Organic Dye
Chemicals
Function
Characteristic
applications
Excimer
Excimer
Function
Chemicals
Characteristic
applications
Organic Dye
Chemicals
Function
Characteristic
applications
• Excited Dimers
– F2, Xe2 ect.
• Excited Complexes (Exciplex)
– Combination of rare gas atoms and
halogen atoms
– Ar, Kr, Xe
– F, Cl, Br
Excimer LASER
Excimer
Function
Chemicals
Characteristic
applications
Organic Dye
Chemicals
Function
Characteristic
applications
Excimer
Wavelength
Ar2
126 nm
Kr2
146 nm
F2
157 nm
Xe2
172 and 175
ArF
193 nm
CaF2
193 nm
KrCl
222 nm
KrF
248 nm
Cl2
259 nm
XeBr
282 nm
XeCl
309 nm
N2
337 nm
XeF
351 nm
•Many wavelength possibilities
•Depends upon the excited
dimer
•Repetition rate from 0.05 Hz to
20 kHz
•High power:
•several 10-200 W
Excimer LASER
• Micromaching
Excimer
Function
Chemicals
Characteristic
applications
Organic Dye
Chemicals
Function
Characteristic
applications
– Ink jet cartidges (drilling the nozzles)
• Radiation for changing the structure
and properties of materials
– Active matrix LCD monitors
– Fiber bragg gratings
– High temperature superconducting films
• “Short wavelength light bulb” in optical
litography
– Computer chips
1. Introduction
The Free Electron Laser (FEL) consists of
a relativistic beam of electrons (v≈c)
moving through a spatially periodic magnetic field (wiggler).
S
N
S
N
S
Relativistic
EM radiation
N S N S N
electron
l  lw /g2<< lw
Magnetostatic “wiggler” field
beam
(wavelength lw)
Principal attraction of the FEL is tunability :
- FELs currently produce coherent light from microwaves
through visible to UV
- X-ray production via Self- Amplified Spontaneous
Emission (SASE) (LCLS – 1.5Å)
Principle
Two beams (object beam and reference beam) are superimposed on a
holographic plate to form an image called a hologram.
Principle
A beam of light
(reading beam)
having the same
wavelength as
that of the
reference beam
used
for
constructing the
hologram,
is
made to fall
over
the
hologram, which
in turn gives rise
to a 3-D image
in the field of
view.
Extra slides
Review of Semiconductor Physics
kB  1.381023 JK -1
a) Energy level diagrams showing the excitation of an electron from the valence band to the conduction band.
The resultant free electron can freely move under the application of electric field.
b) Equal electron & hole concentrations in an intrinsic semiconductor created by the thermal excitation of
electrons across the band gap
Optical Fiber communications, 3rd ed.,G.Keiser,McGrawHill, 2000
n-Type Semiconductor
a)
b)
Donor level in an n-type semiconductor.
The ionization of donor impurities creates an increased electron concentration distribution.
Optical Fiber communications, 3rd ed.,G.Keiser,McGrawHill, 2000
p-Type Semiconductor
a)
Acceptor level in an p-type semiconductor.
b)
The ionization of acceptor impurities creates an increased hole concentration distribution
Optical Fiber communications, 3rd ed.,G.Keiser,McGrawHill, 2000
The pn Junction
Electron diffusion across a pn junction
creates a barrier potential (electric field)
in the depletion region.
Optical Fiber communications, 3rd ed.,G.Keiser,McGrawHill, 2000