Transcript Slide 1
Chem 140a
Lecture Notes #8: Class #10
Recombination-Generation Statistics (R-G)
(Shockley-Read-Hall statistics)
<Review>
Photocurrent: due to minority carrier current generated from photoinduced holes, p
h n p
n ND
n
p
ns
nb
p
If band bending is steep enough, all p cross the interface
and J ph is a constant
J J 0 [exp( qV / AkT ) 1] J ph
Δp
at Voc, J 0 So,
J 0 [exp( qV / AkT ) 1] J ph
if V
3kT
, we can ignore "1"
q
J 0 [exp( qV / AkT )] J ph
Voc
AkT J ph
ln
q
J0
Name of this game is
to minimize J 0 to get large Voc
<Review>
SC/Metal interface,
qb
J 0 A T exp(
)
kT
*
2
: we want to have large b to minimize J 0
SC/Solution interface,
J 0 qket [ A]ns 0
J 0, so ln J 0,m
MIS,
insulator induces a less than unity probability for the e- to corss the SC interface
Limit of b ,
Max b can only be as big as band gap energy, E g
Five Mechanisms
Majority carrier process
1
Ecb
2
2 Tunneling
5
Minority carrier process
3
ET
1 Thermionic Emission
3 Bulk Recombination
4
Evb
4 Depletion Region Recombination
5 Surface Recombination
Under light or a bias, np>ni2. So there is a driving force to return to the equilibrium.
Extra holes will recombine with extra electrons Recombination
If somehow we were sucking carriers out of a region of the SC, np<ni2 and carriers
would be generated Generation
Shockley-Read-Hall statistics: Good model for all of these minority carrier processes
of recombination in the SC
Bulk Recombination
For recombination (loss of carriers),
e1
kn
2
kn’
Ecb
dn
dn
dn
dt R dt 1 dt 2
ET
kp
3
kp’
4
p+
1
dp
dt
R
dp
dp
dt 3 dt 4
fT fraction of filled trap states
Evb
1 fT fraction of empty trap states
dn
kn nb (1 fT ) NT
dt 1
2
dn
kn ' fT NT
dt 2
[cm-3]
3
dp
k p pb fT NT
dt 3
[cm-3sec-1]
[cm-3]
(unitless)
[cm3/sec] : has an analogy with Vth
where is cross-section and Vth is velocity
dp
k p ' (1 fT ) NT
4
dt 4
Bulk Recombination
e1
kn
2
kn’
Ecb
ET
kp
3
kp’
4
p+
Evb
rn =
dn
dn
dn
kn nb (1 fT ) N T kn ' fT N T
dt R dt 1 dt 2
rp =
dp
dp
dp
k p pb fT N T k p ' (1 fT ) N T
dt R dt 3 dt 4
Equilibrium conditions: Principle of detailed balance
All fundamental processes and their inverse processes must self balance
rn rp 0
electrons,
kn nb ,0 (1 fT ) N T kn ' fT N T
kn '
1 fT
kn nb ,0
fT
Bulk Recombination
For electrons,
kn nb ,0 (1 fT ) N T kn ' fT N T
kn '
1 fT
kn nb ,0
fT
What is the ratio,
1 fT
?
fT
Probability that a trap is filled is given by Fermi-Dirac Statistics.
fT
1
exp[( EF ET ) / kT ] 1
1 fT
1
exp[( EF ET ) / kT ] 1
1
fT
exp[( EF ET ) / kT ] 1
exp[( EF ET ) / kT ] 1
1
1
1 fT
exp[( EF ET ) / kT ] 1 exp[( EF ET ) / kT ] 1 1
1
exp[( EF ET ) / kT ] 1
fT
1
1 fT exp[( EF ET ) / kT ]
Bulk Recombination
1 fT
exp[( E F ET ) / kT ]
fT
kn ' kn (
1 fT
)nb ,0 kn nb ,0 exp[( EF ET ) / kT ]= kn N C exp[ ( EC ET ) / kT ]
fT
(
nb ,0 =NC exp[ ( EC E F ) / kT ])
kn ' doesn't depend on the Fermi level and only depends on the trap energy level
For a given trap energy, NC exp[( EC ET ) / kT ] is a constant.
Let n1 =NC exp[( EC ET ) / kT ]
Then, kn ' kn n1
Similarly, k p ' k p p1
where p1 =N V exp[( ET EV ) / kT ]
By plugging in kn ' and k p ' ,
rn =
dn
kn nb (1 fT ) N T kn n1 fT N T
dt R
rp =
dp
k p pb fT N T k p p1 (1 fT ) N T
dt R
Bulk Recombination
Steady state relationship: Major assumption in device problems and analysis
At steady state, rn rp
( Different from the equilibrium)
U bulk
dn
dp
recombination rate
dt R
dt R
Plug in our values for rn & rp
kn nb (1 fT ) N T kn n1 fT N T k p pb fT N T k p p1 (1 fT ) N T
N T s cancel and solve for fT
kn nb (1 fT ) kn n1 fT k p pb fT k p p1 (1 fT )
kn nb kn nb fT kn n1 fT k p pb fT k p p1 k p p1 fT
fT
kn nb k p p1
kn nb kn n1 k p pb k p p1
1 fT
k p pb kn n1
kn nb kn n1 k p pb k p p1
Now that we have fT and 1-fT we can use them to calculate U bulk .
Bulk Recombination
U bulk
dn
dp
dt R
dt
R
= kn nb (1 fT ) N T kn n1 fT N T
U bulk N T
U bulk N T
kn nb ( k p pb kn n1 ) kn n1 ( k n nb k p p1 )
kn ( nb n1 ) k p ( pb p1 )
kn k p ( nb pb n1 p1 )
kn ( nb n1 ) k p ( pb p1 )
n1 p1 N C exp[( EC ET ) / kT ] N V exp[ ( ET EV ) / kT ]
N C N V exp[( EC EV ) / kT ] ni 2
So the recombination rate in bulk,
U bulk N T
kn k p ( nb pb ni 2 )
kn ( nb n1 ) k p ( pb p1 )