Transcript Si(557)

Magnetic Nanostructures
F. J. Himpsel, Dept. of Physics, UW-Madison
• Limits of Data Storage
• Magnetoelectronics
• One-Dimensional Structures on Silicon
SSSC Meeting, Irvine, Oct. 4, 2001
All of the information ... accumulated in all the books
in the world can be written … in a cube of material
1/200 inch wide.
Use 125 atoms to store one bit.
Richard Feynman
Caltech, December 29th, 1959
In pursuit of the ultimate storage medium
1 Atom per Bit
Writing a Zero
Before
After
Filling all Sites
Natural Occupancy:
 50%
After Si Evaporation:
 100%
Smaller Bits

Less Energy Stored 
Slower Readout
Use Highly-Parallel Readout
Array of Scanning Probes
Array of Shift Registers
( Millipede, IBM Zrich )
( nm  m )
Magnetic Storage Media
Magnetic Force
Microscope
Image (IBM)
600
nm
17 Gbits/inch2 commercial
Hundreds of particles per bit
Single particle per bit !
50 nm
10 nm particle
Perfect Magnetic Particles
FePt
Sun, Murray , Weller, Folks, Moser,
Science 287, 1989 (2000)
Magnetoelectronics
Spin Currents instead of
Charge Currents
Giant Magnetoresistance:
Spin-Polarized Tunneling:
GMR and Spin - Dependent Scattering
Parallel Spin Filters  Resistance Low
Opposing Spin Filters  Resistance High
Filtering mechanisms
• Interface: Spin-dependent Reflectivity  Quantum Well States
• Bulk: Spin-dependent Mean Free Path  Magnetic Doping
Spin-polarized Quantum Well States
Minority spins discrete,
Majority spins continuous
High Resolution Photoemission
Ni
Energy Relative to EF [eV]
4
2
0
-2
0.7
0.9
k||
along [011]
1.1
[Å-1
]
-4
-6
-8
States near the Fermi level
determine magneto-transport
-10

K
X
(  3.5 kT = 90 meV )
Magnetic Doping
Fe doped
Magnetic Impurity Selects Spin Carrier
One-Dimensional Structures on Silicon
Why Silicon ?
Couple Nano- to Microelectronics
Utilize Silicon Technology
Storage Media:
1 Particle (Atom) per Bit
Atomically Precise Tracks
Step Arrays as Templates:
2 - 80 nm
1 Kink in 20 000 Atoms
Emulate Lithography:
CaF2 Masks
Selective Deposition
Atomic Wires:
Exotic Electrons in 1D
Si(111) 77
Control the step spacing
in units of
2.3 nm = 7 atom rows
x - Derivative of the STM Topography
“Illumination from the Left Casting Shadows”
Step
Step
Stepped Silicon
Template
1 Kink in
20 000 Atoms
15 nm
Si(557)
5.73 nm
Regular Step Spacing
Si(557)
77 Unit + Triple Step
= 17 Atomic Rows
Stepped Silicon Templates
triple
6 nm
single
15 nm
Tobacco Mosaic Virus
bunched
80 nm
CaF2 Mask
Selective Adsorption
DPP Molecule
Selective Deposition
via Photolysis of Ferrocene
Troughs converted to Fe wires
Clean Si(557)
6 nm
2 nm
Decoration of Steps  Atomic Wires
+ Gold
Si(557) - Au
Spin - Charge Separation
in a One-Dimensional Metal
Photoelectron
EF
Hole  Holon + Spinon
EF =
Spinon
Holon
Crossing at EF
Zacher, Arrigoni, Hanke, and
Schrieffer, PRB 57, 6379 (1998)
Si(557)-Au
• Splitting persists at EF
• Electron count is even
 Not spin charge separation
EFermi
Two degenerate orbitals ?
Antibonding
E1
E2
Bonding
Tailoring the Electronic Structure
stepped
flat
Electron count even,
Electron count odd,
two bands, metallic
one band, “gap”
Si(111) - Au
http://uw.physics.wisc.edu/~himpsel