Transcript - Maheshtala College

TRANSISTOR BASICS
MAHESHTALA COLLEGE
DEPARTMENT OF COMPUTER SCIENCE
PALLAB KUMAR DAS
INTRODUCTION
• The basic of electronic system now a days is
semiconductor device.
• The famous and commonly use of this device is BJTs
(Bipolar Junction Transistors).
•
It can be use as amplifier and logic switches.
•
BJT consists of three terminal:
 collector : C
 base : B
emitter : E
•
Two types of BJT : pnp and npn
• 3 layer semiconductor device consisting:
2 n- and 1 p-type layers of material  npn
transistor
2 p- and 1 n-type layers of material pnp
transistor
• The term bipolar reflects the fact that holes and
electrons participate in the injection process into the
oppositely polarized material
NPN
• A single pn junction has two different types of bias:
forward bias
reverse bias
• Thus, a two-pn-junction device has four types of bias.
PNP
Transistor currents
-The arrow is always drawn
on the emitter
-The arrow always point
toward the n-type
-The arrow indicates the
direction of the emitter
current:
pnp:E B
npn: B E
IC=the collector current
IB= the base current
IE= the emitter current
Transistor Operation
• The basic operation will be described using the pnp transistor. The
operation of the pnp transistor is exactly the same if the roles played
by the electron and hole are interchanged.
• One p-n junction of a transistor is reverse-biased, whereas the other is
forward-biased.
Forward-biased junction
of a pnp transistor
Reverse-biased junction
of a pnp transistor
• Both biasing potentials have been applied to a pnp transistor and resulting majority
and minority carrier flows indicated.
• Majority carriers (+) will diffuse across the forward-biased p-n junction into the ntype material.
• A very small number of carriers (+) will through n-type material to the base
terminal. Resulting IB is typically in order of microamperes.
• The large number of majority carriers will diffuse across the reverse-biased junction
into the p-type material connected to the collector terminal.
• Majority carriers can cross the reverse-biased junction because
the injected majority carriers will appear as minority carriers in
the n-type material.
• Applying KCL to the transistor :
IE = IC + IB
• The comprises of two components – the majority and minority
carriers
IC = ICmajority + ICOminority
• ICO – IC current with emitter terminal open and is called leakage
current.
npn BJTs – Operation Modes
Forward & reverse polarized
pn junctions
Different operation modes:
BJTs – Basic configurations
npn Common Emitter circuit
•
Emitter is grounded.
•
Base-Emitter starts to conduct with VBE=0.6V,IC flows and it’s IC=b*IB.
•
Increasing IB, VBE slowly increases to 0.7V but IC rises exponentially.
•
As IC rises ,voltage drop across RC increases and VCE drops toward ground.
(transistor in saturation, no more linear relation between IC and IB)
Common Emitter characteristics
Collector current
controlled by the
collector circuit.
(Switch behavior)
In full saturation
VCE=0.2V.
No current flows
Collector current
proportional to Base
current
The avalanche
multiplication of
current through
collector junction
occurs: to be
avoided
BJTs – Current & Voltage Relationships
Operation mode: vBE is forward & vBC is reverse
  v BE
i E  I ES exp 
  VT
The Shockley equation
Einstein relation
 
  1
 
D
kT


q
IES–saturation I (10-12-10-16A); VT=kT/q -thermal V (26meV)
D – diffusion coefficient [cm2/s]
The Kirchhoff’s laws
m – carrier mobility [cm2/Vs]
iE  iC  iB
VBE  VBC  VCE  0
It is true regardless of the bias
conditions of the junction
Useful
parameter
iC

iB
iE
the common-emitter current gain
for ideal BJT b is infinite
BJTs – Current & Voltage Relationships
Useful
parameter
iC

iE
the common-base current gain
for typical BJT a is ~0.99
The Shockley equation
once more
If we define the scale current
I S  I ES
A little bit of math… search for iB
iB  1   iE
Finally…
iC

 
iB 1  
  vBE  
  1
iC  I ES exp 
  VT  
 vBE 

iC  I S 
 VT 
  vBE  
  1
iB  1   I ES exp 
  VT  
iC  iB
BJT as Switch
•Vin(Low ) < 0.7 V
•BE junction not forward biased
•Cutoff region
•No current flows
•Vout = VCE = Vcc
•Vout = High
•Vin(High)
•BE junction forward biased (VBE=0.7V)
•Saturation region
•VCE small (~0.2 V for saturated BJT)
•Vout = small
•IB = (Vin-VB)/RB
•Vout = Low
End of Chapter