Transcript SMU - Indico

Link-On-Chip (LOC) 1st Prototype
 Status:
 Prototype chip with the clock unit (PLL),
serializer, laser driver, designed and submitted
in Feb. 2007. Chip will be back to SMU in May
2007.
 One self-biasing PLL (1.25GHz), one LC PLL
(4GHz) are also placed on this chip for
irradiation tests.
 Goal:
 Evaluate the LOC design, perform in-lab tests,
and rad-hard tests at system level.
 Provide a test chip to work on fiber
attachment at chip level.
 Spec:
 2.5 Gbps.
 Plan:
 2007: Summer, in-lab test; Fall, irradiation
test.
 Fiber attachment schemes test.
 LOC2 design. LOC2 is aimed at a complete
serializer chip of 2.5 to 3.125 Gbps data rate.
Need to talk to “users” about input I/O
definition. Aim at a submission in Spring 2008.
April 9, 2016
Report on SMU R&D work
1
GOL Test up to 100 Mrad
 Test with 230 MeV proton beam
 TID: survived 106 Mrad (Si) without current increase. Chip fully
functioning during and after irradiation.
 SEE: no error when flux < 1×109 proton/cm2/sec. When flux = 5×1011
proton/cm2/sec, error cross section is measured to be 1.1×10-13
error·cm2/proton (loss of link) and 1.1×10-14 error·cm2/proton (bit
error).
 Jitter:
Complies with the modified (1.6Gbps vs 1.25 Gbps) IEEE Gigabit
Ethernet standards.
Before irradiation
After irradiation
Jitter Components
Tx clk
Serial Data
Tx clk
Serial Data
Random (RMS)
10.2ps
4.6ps
11.1ps
4.7ps
Deterministic
(Pk-Pk)
67.6ps
55.6ps
67.0ps
57.9ps
Total@BER-14
196.1ps
106.7ps
211.7ps
111.8ps
April 9, 2016
Report on SMU R&D work
2
Silicon-On-Sapphire (SOS) 0.25 m Technology Evaluation
 Goal: to evaluate the 0.25 m SOS technology for rad-hard ASIC design.
 Advantages:
 Low power, low cross talk, good for mixed signal ASIC design.
 Economical for small to medium scale ASIC development. A multi-project run of 3×3
mm2 for 100+ chips cost ~$35k.
 Test chip fabricated:
 8×12 transistors array with different layouts to study TID effects.
 Shift registers to study SEE.
 Other test structures: VCOs, Ring Oscillators, etc, for other studies.
 TID with gamma (Co-60) up to 4 Mrad:
 With a grounding plate under the chip during irradiation, there is no measurable leakage
current and threshold voltage change in both NMOS and PMOS.
 We postulate a mechanism that under the influence of the back plate potential, the
migration of radiation induced electron-hole pairs is altered such that there is a
dynamic balance of net charges in the substrate to be zero. Further studies with
GEANT are being carried out.
 SEE with 230 MeV proton beam:
 With a total fluence of 1.9×1013 proton/cm2 and ionizing dose of 106 Mrad (Si), and a
flux range from 1×107 to 5×1011 proton/cm2/sec, no SEE was measured and all shift
registers function after the irradiation.
 Conclusion:
 SOS 0.25 m technology is rad-hard for ATLAS inner detector readout upgrade ASIC
development. No special layout technique (ELT, guard ring) is needed.
 Propose:
 We propose that this SOS 0.25 m technology be considered for LHC upgrade ASIC
development. We welcome collaborations.
April 9, 2016
Report on SMU R&D work
3
Fiber
 The Fiber:
 Infinicor SX+ 50/250m/1.6mm MM 10G fiber from Corning.
Germanium doped.
 Test condition:
 Gamma from Co-60.
 Proton, 230 MeV, fluence: 1.9×1013 proton/cm2.
 Results:
 Two fiber tested.
 Very small light loss at
low flux. Big loss at
high flux but anneals
very quickly (within
1 hour) back.
 Very promising for LHC upgrade.
 Plan:
 More tests with gamma.
April 9, 2016
Report on SMU R&D work
4
VCSEL
 The VCSEL:
 HFE6192-562 (10G LC w/ 50 ohm flex)
from Finisar.
 Test condition:
 Irradiated with 230 MeV proton with a
total fluence of 1.9×1013 proton/cm2.
 The VCSELs are biased during
irradiations.
 Results:
 Two VCSELs tested.
 Eye diagram – see plots and table.
 Looks very promising but more tests
needed.
Before irradiation
After irradiation
Rise/fall
time (ps)
O-power
(W)
Rise/fall
time (ps)
O-power
(W)
L1
114/130
431
110/128
133
L2
120/132
450
122/132
295
VCSEL
L1, before irradiation
L1, after irradiation
April 9, 2016
Report on SMU R&D work
5