Transcript Deep sub-micron chip development - JLC

Deep sub-micron chip development
Hirokazu Ikeda
Institute of space and astronautical science
Japan aerospace exploration agency
Nov 7-11, 2005
Vertex 2005 @Nikko, H.Ikeda
ISAS, JAXA
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MV, ISAS
HII-A, JAXA
HII-A MV
Nov 7-11, 2005
Vertex 2005 @Nikko, H.Ikeda
ISAS, JAXA
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Contents for Talk
1.
2.
3.
4.
5.
6.
Introduction
Multi-chip project available in Japan
Open-IP
4096-channel pixel array
TEG for FD-SOI CMOS
Summary
Nov 7-11, 2005
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ISAS, JAXA
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1. Introduction
Deep sub-micron CMOS: could be defined as CMOS whose
feature size is smaller than 0.5 um and which no more sustains
a power supply voltage of 5.0 V.
Benefit of sub-micron CMOS are:
1)
2)
3)
4)
5)
6)
Increase in number of transistors on a chip
Improvement of functionality of LSI’s
Increase in switching speed of MOSFET’s and circuits
and, hence, improvement of operation speed of LSI’s
Decrease in cost of LSI’s per performance
Steep increase in radiation hardness (total doze)
(enclosed structure assists to improve radiation hardness.)
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Trend
for TMC
TMC-X
0.18 um CMOS
30 ps/bit
TMC1004,
0.8 um CMOS, NTT
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2. Multi-chip project available in Japan
1.2 um (ON SEMI.)
0.35 um (ROHM)
VLSI
Design &
Education
Center
Academic
institutes
VDEC
(operated
by University of Tokyo)
+ direct submission to MOSIS
+ private multi-chip project
0.18 um (Hitachi)
0.15 um SOI (OKI)
0.09 um (ASPLA)
MOSIS
0.25 um (TSMC)
0.18 um (TSMC)
0.5 um SiGe (IBM)
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VDEC provides
1) LSI chip fabrication…… multi-chip project
2) Test and measurement support……logic tester, EB prober,
FIB facility, and etc.
3) CAD software tool support……Cadence, Mentor, Synopsys,
Silvaco, and etc.
4) Lecture course for LSI design
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3. Open-IP
KEK, ISAS
Available for research use.
Expanded by users’ effort.
Even with these availability of design tools, there exists a big hurdle for
beginners to design an integrated circuit from scratch. In order to lower the
hurdle, a circuit library (IP) is extracted from existing designs, and constructed
to show known circuit topologies together with more or less realistic W/L values.
FB elements
Amplifier elements
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Employing OPEN-IP
Tohoku, ISAS
Tohoku university is developing a pair monitor system for ILC. The pair monitor
employs a 3-D detector as a sensor. The readout chip is configured as a pixel chip.
Each pixel circuit includes a preamplifier, shaping amplifier and comparator.
The shaping amplifier has a peaking time of 100 ns and a decay time of 200 ns to be
compatible with the micro-bunch structure with noise level better than 1000 e’s.
The output of the comparator is fed into a Gray-coded 8-bit counter, whose counts
are latched 16 times during the beam burst and, then, read out during intermittence
of the beam burst. A prototype chip is designed in a 0.25-um rule to be submitted to
TSMC.
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Employing OPEN-IP
TMU, KEK etc.
Tokyo metropolitan university is developing an aerogel Cherenkov detector system
for Super B-factory experiment. The two-dimensionally segmented hybrid
avalanche photo detector acquires a ring image emitted from the aerogel radiator
when charged particles pass through. An analog chain is designed to achieve a
noise level of 1500 e for a detector capacitance 80 pF of the avalanche diode.
The peaking time of the analog signal is adjustable in a range of 0.5 us to 2 us.
The output of the analog chain is fed in to a comparator, and, then, to a shift
register chain to compensate for a trigger latency. The readout is only in binary. A
prototype chip is designed in a 0.35-um rule to be submitted to ROHM.
0.5<p<4.0 GeV/c
Silica aerogel
（1～2cm）
Injection gain: 1000
Avalanche gain: 10
Total: 10000
π or K
Pixelized photo detector
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ISAS, JAXA
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Employing OPEN-IP
Nagoya, KEK etc.
Nagoya university is developing a TOF system for a TOP (Time of propagation)
detector. The TOP detector is a sort of a Cherenkov detector to measure time
differences and geometrical positions of photons at the end of a quartz bar to
reconstruct a Cherenkov image in a space-time coordinate. The geometrical
coordinate is measured by a position sensitive photo-multiplier or a micro-channel
plate, whose outputs are fed into a TAC chip. The TAC chip includes a leading-edge
and/or a constant-fraction comparator channels to be fed into TAC circuits. The
TAC circuit is configured as a dual system to be operated with 10-MHz bi-phase
gates with an overlap of 25 ns. The time resolution envisaged is 20-30 ps. The TAC
chip is designed in a 0.35-um rule to be submitted to ROHM.
Preliminary
10 ns
Nov 7-11, 2005
20 ns
30 ns
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Employing OPEN-IP
Osaka, ISAS
Osaka university is developing a CCD readout system for the X-ray astronomy.
A CCD detector shows a superior nature in noise, but has a drawback in terms of
A readout speed. In order to improve the resolving time, they plan to employ
a parallel readout CCD together with a multi-channel readout VLSI. A test
chip is designed to reproduce an existing performance with a discrete circuit.
The noise level envisaged is an order of less than 10 electrons. The test chip
includes two channels of a complete integrator, hold circuit, and 12-bit Graycoded Wilkinson A-to-D converter. A double-correlated subtraction is carried out
in off-line. The test chip is design in a 0.25 um rule to be submitted to TSMC.
Preliminary
Preliminary
CCD
Buffer
V-I/Integration/HOLD
12-b*2
output
ADC
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3. 4096-channel pixel array
ISAS
Institute of space and astronautical science is
developing a two-dimensional analog VLSI for readout
of pixel sensors based on silicon (Si) or cadmium
telluride (CdTe) for a future use of spectroscopic
imaging observations in X-ray and gamma-ray region.
The chip consists of four 8 mm-by -8 mm sub-chips .The entire chip can be
operated either sequentially or independently for each sub-chip, depending on the
readout speed requirement.. In the upper left corner of the pixel layout there is an
octagonal bonding pad with a diameter of 50 um.
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4096-channel pixel array: signal processing
The amplifier array consists of a charge sensitive preamplifier, shaping amplifier
(FAST and SLOW), peak-hold circuit, and analog multiplexor circuit together
with a test-pulse circuit, analog-monitor circuit and digital-control circuit.
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In order to maintain low-noise characteristics
1) One is the insertion of capacitors between the gate and drain nodes of a
current mirror to slow down the frequency band-width of the bias voltage
generation circuit. 2) Another is the employment of an RC filter for the gate of
the current source of the CSA circuit. The RC filter consists of an offtransistor for R, and a MOS capacitor for C. 3) The third measure is related to
a digital-to-analog interference. We employed a deep N-well process to
electrically isolate the analog circuit from the nearby digital circuits. Eventually
the electronic noise is suppressed down to 100 electrons (rms) or less for a
CdTe pixel X-ray detector.
In order to cope with low power rail voltage
1) Base lines of amplifiers are raised or lowered by 400 mV, which assumes that
the preamplifier is only dedicated to a positive charge. 2) In a similar context,
medium VT transistors are employed almost everywhere except for in logic gates,
switches and constant current sources.
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5. SOI TEG Fabrication
KEK, ISAS etc.
PROS
1)
2)
3)
4)
5)
6)
Latchup immunity
Higher packing density
Higher speed performance
Lower power consumption
Lower leakage current
Reduced short-channel
effects
7) Wide voltage /temperature
operation range
9) Lower processing cost
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CONS
1)
2)
3)
4)
Floationg body phenomena
Parasitic effects
Degraded heat dissipation
Availability and cost of
the substrate
5) Processing difficulties on
the thin film substrates
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Entering into late 1990's, the trend curve of a bulk CMOS
process tends to go behind the Moore's law, and, hence,
the manufactures are eager to find a way to recover
development speed. SOI CMOS is then revisited to
reveal its performance over an existing bulk CMOS;
the SOI CMOS eventually shows up as a successor
of the CMOS process inheriting well-matured fabrication
technologies for a bulk CMOS.
SOI of OKI
Depleted region
The fabrication process for our TEG design is a 0.15 um
FD-SOI CMOS process from Oki electric industry Co.,
Ltd. In comparison with a PD (partially depleted) SOI, the
FD (fully depleted) SOI employs a thinner silicon layer,
and , then, the silicon layer underneath the gate electrode
is completely depleted. The kink effect, which is revealed
for the PD SOI, is moderated for the FD SOI. An
improvement for the threshold slope parameter assists
for us to employ a low VT transistor for an analog circuit
design.
Nov 7-11, 2005
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ISAS, JAXA
FD（fully depleted）-SOI
Thickness: less than 50 nm
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Feedback
Amplifier
CHAIN1
Small current
Large current
16 fC
I fC
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CHAIN2
Nov 7-11, 2005
CHAIN3
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CHAIN4
Nov 7-11, 2005
The TEG circuit includes a buffer
amplifier for a monitoring purpose,
AC-coupling circuit, differential
amplifier(slow/fast/medium) and
comparator.
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LAYOUT of the TEG design
2.4 mm
Bias circuit
CHAIN1
CHAIN2
CHAIN3
CHAIN4
2.4 mm
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ISAS, JAXA
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6. Summary
1) Deep sub-micron CMOS processes have been widely employed for
high energy physics, astrophysics, and other use.
2)Japanese activities for the deep sub-micron CMOS integrated circuits
are discussed, one of which is a 4096-channel pixel array that is
designed and fabricated for future use in the area of astrophysics.
The noise level better than 100 e's is envisaged with incorporating
experiences/ideas obtained so far.
3) In order to go beyond existing technologies for an FE circuit design,
we initiate a design work with an FD SOI process from Oki electric
industry Co., Ltd.
4) We have submitted a TEG design to identify if we can still employ
design practices for a deep sub-micron CMOS, or need to incorporate
technologies exploited/devised in other research fields.
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高速時間計測回路の実現へ向けて
(ROHM 0.35-um CMOS)
Nov 7-11, 2005
TAC Duplex
Vertex 2005 @Nikko, H.Ikeda
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Constant-fraction discriminator
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Introduction
TOP
(Time-of-Propagation) Counter
・New type of ring-imaging Chrenkov counter
・Possible next-generation particle-identification device at the
KEKB-factory Belle experiment
・Measure time difference and geometrical positions of photons at
the end of a quarts bar to reconstruct a Cherenkov ring image in
a space-time coordinate
・Geometrical coordinate is measured by a micro-channel plate
(MCP)
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IC Design
•
TAC（Time-to-Amplitude Converter）
・Dual system to be operated with 10MHz bi-phase gates with an overlap
of 25ns
• Time-walk correction
・Leading Edge(LE) comparator
IN
AMP
AMP
AMP
AMP
AMP
AMP
LVR
OUT
TH
・Amplitude and Risetime Compensated （ARC) comparator
IN
AMP
AMP
AMP
AMP
AMP
AMP
LVR
OUT
AMP
•
Designed in a 0.35 μm rule submitted to ROHM by a multi-chip project
provided by VDEC (VLSI design and education center)
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High-Speed Timing Circuit
CLOCK信号
•
SYNC signal check by changing CLOCK
frequency and duty ratio
・Operation is possible at 50 MHz
・At 40MHz : duty ratio 56-60%
SYNC信号
Preliminary
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Linearity and Time Resolution
•
Correlation between TAC output
and delay
・Measure TAC output by
2 channel to cancel out
same jitter
・Clean linearity is observed
Time resolution as a
function of delay
・30-50 ps is achieved by
the current chip
Preliminary

Nov 7-11, 2005
Preliminary
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マルチポートCCD読出し回路の開発
完全積分回路＋ホールド回路＋Willkinson 型A/D (Gray code)
12 bit , 167 MHz
完全積分
回路
Binary
Gray
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M01チップ
COBにパッケージング
M01チップの仕様
CCDの信号処理を目的として開発
－チップサイズ2.5 mm × 8 mm
－CCDからの入力信号を積分する積分回路
－12ビットのAD変換回路（ウェルキンソン方式）
－２ｃｈ分の処理回路を実装
M01チップレイアウト図
評価基板との組み合わせ
M01チップの回路ブロック（1ch分）
チップ内
CCD
2重相関
ADC
amp評価基板との組み合わせ
サンプリング
Nov 7-11, 2005
出力
12ビット
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動作確認
取得イメージ
入力電圧
ランプ信号用
ゲート信号
積分回路用
ゲート信号
得られたスペクトル
積分回路信号
counts
ランプ信号
Preliminary
WIDTH信号
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channel
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HIGH GAIN
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LOW GAIN
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0
1
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2
3
4
5
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CHAIN1
Output buffer
160 mV
3 us
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CHAIN2
AC-coupling
comparator
200 mV
3 us
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CHAIN3
Differntal amplifier(slow)
Threshold circuit
閾値設定回路
230 mV
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1 us
CHAIN4
Differntial amplifier(meduim) Differntil amplifier(fast)
62 mV
1 us
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More about CHAIN4
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差動増幅回路
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コンパレータ回路
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E/43
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