Transcript Document

T2.2 Task (1/2)
•
•
•
•
Task T2.2: PV-aware device simulation
Focus in this task is on activities to include variability in device simulation tools. TCAD will be used to assess
various device architectures in standard CMOS but also in other technologies concerning variability, to identify
major sources for variability on simulation level already; process sensitivities will be investigated. New methods will
be developed to generate statistical circuit simulation parameter through TCAD, with smart approaches (other than
brute force). Furthermore mixed mode device/circuit simulations will be carried out.
Partners: UNGL, IMEP, UNET, NMX, POLI, STF2, ST-I, SNPS
UNGL will identify the sources of statistical variability in 45 nm CMOS and predict the statistical variability in 32
and 22 nm technology generation devices and advanced NVM devices based on statistical 3D drift diffusion
simulations. The simulations will be carried out with the UNGL 3D ‘atomistic’ statistical simulator GARAND. This
semi-commercial tool includes random discrete dopants, line edge roughness, poly silicon and high-k granularity,
and interface and body thickness variations. Methodology will be developed to capture the transport variability
associated with the above variability sources using 3D Monte Carlo simulations and the results will be folded in the
Drift-Diffusion simulations using appropriate mobility models. The simulator will be interfaced to the TCAD process
simulation tools developed in task 2.1 and validated in respect of 45 nm technology devices from partners in the
consortium. This will allow the identification of the major sources of statistical variability at this technology
generation. The simulator will be than used to predict the magnitude of statistical variability in 32 nm Ultra Thin
Body SOI transistors developed by LETI and 22 nm technology devices with novel architecture. ST-I will translate
behavioral models which take into account the statistical information of process fabrication steps into device
electrical performance. Parameter sensitivities will be studied for a wide range of electrical performance. The
objective of the POLI contribution is to investigate efficient methods to develop physics-based statistical models
and PV aware modeling with the use of smart TCAD approaches, based on sensitivity evaluation techniques, and
to link such approaches to suitable compact model structures. The main object will be mainstream planar bulk
down to CMOS 45/32nm. Starting from DC sensitivities and statistical analysis, linking random process
parameters to random "static" device performances (such as the threshold voltage), extensions to the dynamic
case, based on time- and/or spectral-domain approaches, will be considered. STF2 will extrapolate the results
generated during the first 24 months of MODERN to more advanced nodes. Various advanced device
architectures such as planar Ultra-Thin-Body and BOX (UTB²), FinFET, or Planar Double Gate All-Around will be
compared in terms of robustness to variability (both process-induced and local). For this comparison 16nm design
rules will be estimated and used furtheron to estimate the minimum SRAM bit-cell size for each structure
guaranteeing a proper functionality of a 64Mbit array.
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
1
T2.2 Task (2/2)
•
•
Task T2.2: PV-aware device simulation (cont’)
The device simulation will be carried out using the analytical software MASTAR, which has been
used to calculate ITRS roadmaps 2005 and 2007. IMEP will focus on the modeling of variability in
advanced CMOS devices (bulk and thin film SOI), and on atomistic simulations of variability in thin
film CMOS devices. The work will be carried out in cooperation with STF2. Specific modelling of
the influence of new variability sources like metal gate work function fluctuations, thin film
thickness variation, RTS noise will be investigated using TCAD and simple analytical models. The
latter will also be introduced into MASTAR platform, in collaboration with STF2, for new
technology specification prediction. UNET will put emphasis on the device simulation of memory
cells, transistors for high-performance logic circuits and for low-power mixed-mode applications:
At the beginning a methodology will be defined to evaluate the impact of process tolerances and
intrinsic variability on the dispersion of electrical parameters with computationally efficient TCAD.
Viable modelling approaches to efficiently incorporate new physics phenomena and their
fluctuations in future devices will be worked out, taking into account the impact of variations of the
dielectric thickness, channel doping and stress conditions. In addition a methodology will be
defined to evaluate the impact of PV on a single cell within a memory array. Mixed-mode
device/circuit simulation methodologies will be looked into to analyze the impact of fluctuations on
the performance of simple digital and analog circuit blocks. The objective of the work of NMX is to
study the impact random dopant, edge roughness, and trap position on scaled NVM cells of Non
Volatile Memory technologies from 32nm technology node and below. It’s about to push the
implementation of the capability to treat individual dopant atoms and individual traps instead of
dopant concentrations used nowadays in commercial device simulators. SNPS will enhance the
methods of modeling process induced geometrical variations of the devices. The goal is to find
methods that allow the direct calculation of uncorrelated geometrical variations on device
electrical characteristics. SNPS will evaluate and improve its existing TCAD models with respect
to the treatment of individual dopants and traps in silicon in device modelling tools.
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
2
Device Simulation: T2.2 Deliverables
Ref
Deliverable/ Contributors
Due date
D2.2.1
Assessment of state-of-the-art TCAD methodology and usability concerning PV for
industrial purposes including identification of current deficiencies of tools (UNGL)
M6
D2.2.2
Device simulation analysis of dominant variability sources in 45nm planar bulk CMOS
technologies, and Discrete Power Device,SiC, GaN/AlGaN technologies.
Prototype implementation of the treatment of individual dopants and traps in the device
modeling tools
(UNGL, UNET, NXP, ST-I, SNPS)
M12
D2.2.3
Device simulation analysis of dominant variability sources in state of-the-art NonVolatile-Memory technologies (UNET, UNGL, NMX, SNPS)
M18
D2.2.4
Forecast of the magnitude of statistical variability in 32nm planar bulk CMOS devices via
device simulation (UNGL, IMEP, UNET).
Efficient compact model extraction procedures for modeling process variations and
device fluctuations (NXP, UNET, POLI)
M24
D2.2.5
Application of mixed-mode device-circuit simulations for the analysis of the impact of
fluctuations (UNET)
TCAD based assessment of PV effects of potential 22nm device architectures (UNGL)
M27
D2.2.6
Sensitivity analysis of Non Volatile Memory device performance as a function of
individual trap position (NMX)
Toolbox (methodologies, models, tools) to make dominant variability effects accessible
to industrial usage of TCAD, outlook to 16nm device architecture robustness using
MASTAR (UNGL, STF2)
M36
Task Leader: [email protected]
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
3
T2.2 Review
Deliverables
D 2 .2 .1 D 2 .2 .2 D 2 .2 .3 D 2 .2 .4
0 8 /0 9 0 2 /1 0 0 8 /1 0 0 2 /1 1
U N GL T he U nivers ity of G las gow
L
L
P
L
I M E P I M E P - L A H C L aboratory
P
U N E T C ons orzio N azionale I nt. N ano
P
L
P
NMX
N umonyx I taly Srl
P
P O L I P olitec nic o di T orino
P
ST F2 ST M ic roelec tronic s (C rolles 2 ) SA S
ST - I
ST M ic roelec tronic s S.r.l.
P
SN P S Synops ys Switzerland L L C
P
P
For each deliverable
• Identify contributing partners
• Identify deliverable leaders
• Taking charge of Deliverables
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
4
D 2 .2 .5 D 2 .2 .6
0 5 /1 1 0 2 /1 2
P
P
L
L
P
T2.2 Review: Activity done so far
• Discussion and partial agreement on template
devices
Bulk MOSFETs
45nm STF2 - availability: possibly recalibration
32nm STF2 - availability? 5way NDA in progress
22nm ???
16nm ???
FD SOI MOSFETs
32nm LETI (T2.3) Is it confirmed by Leti?
22nm LETI (T2.3)
16nm LETI (T2.3)
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
5
T2.2 Review: Activity done so far
• Discussion and partial agreement on template
devices
FinFETS
22nm ??? Note that NXP might provide HW within T2.3
16nm ???
None Volatile Memory (NVM)
NMX, under NDA
SiC
ST-I, conditions to be defined
GaN/AlGaN
ST-I, conditions to be defined
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
6
T2.2 Review: Activity done so far
• Discussion and partial agreement on template
devices
Who wants/needs access to the different template
devices.
Prepare the necessary NDA.
Now the deliverables covered but partial NDA will be
developed/distributed
Format of data to be exchanged
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
7
T2.2 Review: Activity done so far
• Format of data to be exchanged
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
8
T2.2 Review: Activity done so far
• Review of needs for statistical TCAD simulation
– All major semiconductor players contacted
– 25 responses so far from TCAD and device engineers
including NEC, Fujitsu, Chartered, IBM, Freescale,
NXP, Panasonic, Intel, Numonix, Toshiba, Infineon,
Samsung, Renesas, Hitachi, Altera, Sony
– TSMC declined to participate
– Still awaiting response from ST-F
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
9
T2.2 Review: Activity done so far by partners
• NMX
– Preliminary discussion (internal and with
UNGL/SNPS) on NMX needs and possible solutions
– Investigating PV effects related to doping and traps in
NVM cells using a 3D Drift-Diffusion approach
• POLI/G
– Preliminary assessment of PV-aware commercial
TCAD tools, tele-meeting with Synopsys
– General agreement w/ SNPS on defining a common
framework of operation (explore analog applications,
assess sources of fluctuations etc.)
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
10
T2.2 Review: Activity done so far by partners
• IMEP
– Self-consistent calculations based on Full-3D realspace NEGF and Coupled mode-space (CMS) NEGF
Recent results
Surface-roughness scattering in SiNWs and DG MOSFETs
Remote Coulomb scattering in SiNWs
Electron-phonon scattering in SiNWs
– Simple modelling of variability for MAstar (coll with
ST)
– Analytical model for pocket impact on MOSFET with
data from T2.3 on 45nm CMOS
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
11
T2.2 Review: Plan for D2.2.1
• Collect and analyze the survey of requirements
• Invite TCAD tool vendor to declare the
capabilities of their tools to asress the
requirements
• Prioritization related to the MODERN partners
neeeds
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
12
T2.2 Review: Plan for D2.2.2
•
•
•
•
Finalize the relevant template devices
Identify the players
Complete the necessary NDAs
Identify the variability sources to be included in
the simulations
• Agree on specifications and parameters
describing the variability sources
• Agree on simulation sets and perform simulations
• Collect and compare results
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
13
T2.2 Review: Plan for D2.2.2
• In order to receive half of its MODERN funding from
Scottish Enterprise UGLA had to create a company Gold
Standard Simulations (GSS)
• The company will provide simulations services of
statistical variability using software developed by UGLA
and Grid technology
• UGLA will subcontract production simulations of 45nm,
32nm and 22nm devices to GSS
• GSS will offer similar cervices to other companies on
commercial basis
• GSS will also offer services in statistical compact model
extraction, statistical circuit simulation and statistical
standard cell characterization usin in-house tools
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
14
T2.2 Review: Plan for D2.2.3
•
•
•
•
Finalize the relevant template devices
Identify the players
Complete the necessary NDAs
Identify the variability sources to be included in
the simulations
• Agree on specifications and parameters
describing the variability sources
• Agree on simulation sets and perform simulations
• Collect and compare results
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
15
T2.2 Review: Issues
• Ensure that the simulated and the measured
devices are identical
• Italy and UK contracts not signed yet…
• Agree on tool features definition (D2.2.1=>D1.1)
– Integration in SNPS platform
– Issues on 3D meshing strategy and mobility models
• Confirm time line for tool availability
– M12 for doping/traps (D2.2.2), M24 for geometry
(D5.3.2)
• Choose best benchmarks
Project Review Meeting
Crolles, June 22, 2009
21/07/2015
16