Transcript Document

1
Chapter 4
MOS Field-Effect Transistors
(MOSFETs)
2015/7/17
J. Chen
Content
2
4.0 Introduction
4.1 Device Structure and Physical Operation
4.2 Current-Voltage Characteristics
4.3 MOSFET Circuits at DC
4.4 The MOSFET as an Amplifier and as a Switch
4.5 Biasing in MOS Amplifier Circuits
4.6 Small-Signal Operation and Models
4.7 Single-Stage MOS Amplifiers
4.8 The MOSFET Internal Capacitances and High-Frequency Model
4.9 Frequency Response of the CS Amplifier
4.10 The CMOS Digital Logic Inverter
4.11 The Depletion-Type MOSFET
4.12 The SPICE MOSFET Model and Simulation Example
2015/7/17
J. Chen
3
4.0 Introduction to FET

Three-terminal devices are far more useful than two-terminal
ones, because they can be used in a multitude of applications,





signal amplification
digital logic
memory circuits.
……
The basic principle  the use of the voltage between two
terminals to control the current flowing in the third terminal.

2015/7/17
Transistor = transfer resistor
J.P. Chen
4.0 Introduction to FET
4

FET: Field Effect Transistor
 There are two types



MOSFET: metal-oxide-semiconductor FET
JFET: Junction FET
MOSFET is also called the insulated-gate FET or
IGFET.




2015/7/17
Quite small
Simple manufacturing process
Low power consumption
Widely used in VLSI circuits(>billion on a single IC chip)
J. Chen
4.1 Device structure of MOSFET (n-type)
Source(S)
Gate(G)
5
Drain(D)
Metal
Oxide
(SiO2)
n+
Channel area
n+
p-type Semiconductor
Substrate (Body)
Body(B)

2015/7/17
For normal operation, it is needed to create a
conducting channel between Source and Drain
J. Chen
4.1 Creating a channel for current flow
6
An n channel can be induced at
the top of the substrate beneath
the gate by applying a positive
voltage to the gate
The channel is an inversion
layer
The value of VGS at which a
sufficient number of mobile
electrons accumulate to form a
conducting channel is called the
threshold voltage (Vt)
2015/7/17
J. Chen
4.1 Device structure of MOSFET
7
L = 0.1 to 3 mm
W = 0.2 to 100 mm
Tox= 2 to 50 nm
Cross-section view
2015/7/17
J. Chen
4.1 Classification of FET

8
According to the type of the channel, FETs can
be classified as

MOSFET



2015/7/17
N channel
P channel
•Enhancement type
•Depletion type
•Enhancement type
•Depletion type
JFET

P channel

N channel
J. Chen
4.1 Drain current @ small voltage vDS
9
An NMOS transistor with vGS > Vt and with a small vDS
applied.
 The channel depth is uniform and the device acts as a
resistance.
The channel conductance is
proportional to effective voltage,
or excess gate voltage, (vGS – Vt) .
Drain current is proportional to
(vGS – Vt) and vDS.
2015/7/17
J. Chen
4.1 Drain current @ small voltage vDS
2015/7/17
10
J. Chen
4.1 Operation as vDS is increased
11
 The induced channel acquires a tapered shape.
 Channel resistance increases as vDS is increased.
 Drain current is controlled by both of the two voltages.
B
2015/7/17
J. Chen
4.1 Channel pinched off

12
When VGD = Vt or VGS - VDS = Vt , the channel is
pinched off


2015/7/17
Inversion layer almost disappeared at the drain point
Drain current does not disappeared!
J. Chen
13
4.1 Drain current @ pinch off
• The electrons pass through the pinch off area at very
high speed so as the current continuity holds, similar to
the water flow at the Yangtze Gorges
Pinched-off channel
2015/7/17
J. Chen
4.1 Drain current @ pinch off

14
Drain current is saturated and only controlled by
the vGS
2015/7/17
J. Chen
15
4.1 Drain current controlled by vGS
 vGS creates the channel.
 Increasing vGS will increase
the conductance of
the channel.
 At saturation region only the vGS controls the
drain current.
 At subthreshold region, drain current has the
exponential relationship with vGS
2015/7/17
J. Chen
4.1 p channel device

16
Two reasons for readers to be
familiar with p channel device
Existence in discrete-circuit.
 More important is the
utilization of complementary
MOS or CMOS circuits.

2015/7/17
J. Chen
4.1 p channel device

17
Structure of p channel device
 The substrate is n type and the inversion layer is p type.
 Carrier is hole.
 Threshold voltage is negative.
 All the voltages and currents are opposite to the ones of n
channel device.
 Physical operation is similar to that of n channel device.
2015/7/17
J. Chen
4.1 Complementary MOS or CMOS
18
 The PMOS transistor is formed in n well.
 Another arrangement is also possible in which an n-type body is used and
the n device is formed in a p well.
 CMOS is the most widely used of all the analog and digital IC circuits.
2015/7/17
J. Chen
4.2 Current-voltage characteristics
19

Circuit symbol
 Output characteristic curves
 Channel length modulation
 Characteristics of p channel device
 Body effect
 Temperature effects and Breakdown Region
2015/7/17
J. Chen
4.2 Circuit symbol
20
(a) Circuit symbol for the n-channel enhancement-type MOSFET.
(b) Modified circuit symbol with an arrowhead on the source terminal to
distinguish it from the drain and to indicate device polarity (i.e., n channel).
(c)
2015/7/17
Simplified circuit symbol to be used when the source is connected to the
body or when the effect of the body on device operation is unimportant.
J. Chen
4.2 Output characteristic curves
21
(a) An n-channel enhancement-type
MOSFET with vGS and vDS applied
and with the normal directions of
current flow indicated.
(b) The iD–vDS characteristics for a
NMOS device
(c) Three distinct region
 Cutoff region
 Triode region
 Saturation region
2015/7/17
J. Chen
4.2 Cutoff region
22
• Biased voltage
vGS  Vt
• The transistor is turned off.
iD  0
• Operating in cutoff region as a switch.
2015/7/17
J. Chen
23
4.2 Triode region
• Biased voltage
vGS  Vt
vDS  vGS  Vt
𝑖. 𝑒. 𝑉𝐺𝐷 = 𝑉𝐺𝑆 − 𝑉𝐷𝑆 > 𝑉𝑡
• The channel depth changes from uniform to tapered
shape.
• Drain current is controlled not only by vDS but also by
vGS
W
L
W
 kn '
L
iD  k n '
2015/7/17
1

2
(
v

V
)
v

v
t
DS
DS 
 GS
2

(vGS  Vt )vDS
process transconductance parameter
J. Chen
24
4.2 Triode region
• Assuming that the drain-source voltage is
sufficiently small, the MOS operates as a linear
resistance
rDS
v DS

iD


vGS VGS
1
kn '
2015/7/17
1
W
kn '
(VGS  Vt )
L
W
VOV
L
J. Chen
4.2 Saturation region
25
• Biased voltage
vGS  Vt
vDS  vGS  Vt
• The channel is pinched off.
• Drain current is controlled only by vGS
W
iD  k n ' （vGS  Vt ) 2
L
1
2
• Drain current is independent of vDS and behaves as an
ideal current source.
2015/7/17
J. Chen
26
4.2 Saturation region
 Square law of iD–vGS characteristic curve.
The iD–vGS characteristic for an enhancement-type NMOS transistor in saturation
2015/7/17
J. Chen
4.2 Channel length modulation
27
• Pinched point moves to source terminal with the voltage vDS
increased. Hence the effective channel length is reduced and
channel resistance decreased  Drain current increases with the
voltage vDS increased.
• Current drain is modified by the channel length modulation
VA ——Early voltage, depending on the process
technology and proportional to the channel length L.
2015/7/17
J. Chen
4.2 Channel length modulation
28
• MOS transistors don’t behave an ideal current
source due to channel length modulation.
W
2
iD  12 k n ' （vGS  Vt )（
1＋vDS )
L
• The output resistance is finite.
 iD 
ro  


v
 DS 
1
vGS  const .
1
VA


I D
ID
• The output resistance is inversely proportional to
the drain current.
2015/7/17
J. Chen
4.2 Large-signal equivalent circuit model
29
Large-signal equivalent circuit model of the n-channel MOSFET in
saturation, incorporating the output resistance ro. The output resistance
models the linear dependence of iD on vDS
2015/7/17
J. Chen
4.2 Characteristics of p channel device
30
(a) Circuit symbol for the p-channel enhancement-type MOSFET.
(b) Modified symbol with an arrowhead on the source lead.
(c) Simplified circuit symbol for the case where the source is connected to the
body.
2015/7/17
J. Chen
4.2 Characteristics of p channel device
31
The MOSFET with voltages applied and the directions of
current flow indicated.
The relative levels of the terminal voltages of the
enhancement-type PMOS transistor for operation in the triode
region and in the saturation region.
2015/7/17
J. Chen
4.2 Characteristics of p channel device
32
Large-signal equivalent circuit model of the p-channel MOSFET in
saturation, incorporating the output resistance ro. The output resistance
models the linear dependence of iD on vDS
2015/7/17
J. Chen
33
4.2 The body effect



In discrete circuit usually there is no body effect due to the
connection between body and source terminal.
In IC circuit the substrate is connected to the most
negative power supply for NMOS circuit in order to
maintain the pn junction reversed biased.
The body effect---the body voltage can control iD



2015/7/17
Widen the depletion layer
Reduce the channel depth
The body effect can cause the performance degradation.
J. Chen
4.2 Temperature effects and breakdown
34

Drain current will decrease when the temperature
increase.
 Breakdown



2015/7/17
Avalanche breakdown
Punched-through
Gate oxide breakdown
J. Chen
4.2 MOS管注意事项
35

MOS管栅-衬之间的电容很小，只要有少量的
感应电荷就可产生很高的电压。
 由于RGS(DC)很大，感应电荷难于释放，感应
电荷所产生的高压会使很薄的绝缘层击穿，
造成管子损坏。
 因此，在存放、焊接和电路设计时要多加注
意，应给栅-源之间提供直流通路，避免栅极
悬空。
2015/7/17
J. Chen
36
4.2 MOS管注意事项

MOS器件出厂时通常装在黑色的导电泡沫
塑料袋中，切勿自行随便拿个塑料袋装。
可用细铜线把各个引脚连接在一起，或用
锡纸包装。
 取出的MOS器件不能在塑料板上滑动，应
用金属盘来盛放待用器件。
 焊接用的电烙铁必须良好接地。
 在焊接前应把电路板的电源线与地线短接，
待MOS器件焊接完成后再分开。
2015/7/17
J. Chen
37
4.2 MOS管注意事项

MOS器件各引脚的焊接顺序是漏极、源极、
栅极。拆机时顺序相反。
 电路板在装机之前，要用接地的线夹子去
碰一下机器的各接线端子，再把电路板接
上去。
 MOS场效应晶体管的栅极在允许条件下，
最好接入保护二极管。在检修电路时应注
意查证原有的保护二极管是否损坏。
2015/7/17
J. Chen
4.3 MOSFET amplifier: DC analysis
1.
Assuming device operates in saturation thus iD satisfies with
iD~vGS equation.
2.
According to biasing method, write voltage loop equation.
3.
Combining above two equations and solve these equations.
4.
Usually we can get two value of vGS, only the one of two has
physical meaning.
5.
Checking the value of vDS
i.
ii.
2015/7/17
38
if vDS ≥ vGS-vt, the assuming is correct.
if vDS ≤ vGS-vt, the assuming is not correct. We shall use
triode region equation to solve the problem again.
J. Chen
4.3 Examples of DC analysis
39
The NMOS transistor is
operating in the saturation
region due to
Vt  2V
2015/7/17
VGD  Vt
J. Chen
4.3 Examples of DC analysis
40
Assuming the MOSFET operate in the saturation region
Checking the validity of the assumption
If not to be valid, solve the problem again for triode region
2015/7/17
J. Chen
4.4 The MOSFET as an amplifier
41
Basic structure of the
common-source amplifier
Graph determining the
transfer characteristic
of the amplifier
2015/7/17
J. Chen
42
4.4 The MOSFET as an amplifier
 Transfer characteristic
showing operation as an
amplifier biased at point Q.
 Three segments:
vo
Time
 XA---the cutoff region
segment
 AQB---the saturation
region segment
 BC---the triode region
segment
vI
vi
2015/7/17
Time
J. Chen
4.5 Biasing in MOS amplifier circuits

Voltage biasing scheme



43
Biasing by fixing voltage
(constant VGS)
Biasing with feedback
resistor
Current-source biasing
scheme
Disadvantage of fixing biasing
Fixing biasing may result in large ID variability due to deviation
in device performance
Current becomes temperature dependent
 Unsuitable biasing method
2015/7/17
J. Chen
44
4.5 Biasing in MOS with feedback resistor
Biasing using a resistance in the source lead can reduce the
variability in ID
Coupling of a signal source to the gate using a capacitor CC1
2015/7/17
J. Chen
4.5 Biasing in MOS with current-source
Biasing the MOSFET using a
constant-current source I
2015/7/17
45
Implementing a constant-current
source using a current mirror
J. Chen
4.6 Small-signal operation and models
 The
ac characteristic

Definition of transconductance

Definition of output resistance

Definition of voltage gain
 Small-signal
2015/7/17
46
model

Hybrid π model

T model

Modeling the body effect
J. Chen
4.6 The conceptual circuit
47
 Conceptual circuit utilized to study
the operation of the MOSFET as a
small-signal amplifier.
 Small signal condition
vgs  2(VGS  Vt )
2015/7/17
J. Chen
48
4.6 The small-signal models
Without the channel-length
modulation effect
iD
gm 
vGS
vGS VGS
W
 k n ' VOV
L
—transconductance
2015/7/17
With the channel-length
modulation the effect by
including an output resistance
vDS
ro 
iD
iD  I D
VA

ID
J. Chen
49
4.6 The small-signal models
The T model of the MOSFET
augmented with the drain-tosource resistance ro
2015/7/17
An alternative representation
of the T model
J. Chen
4.6 Modeling the body effect
50
Small-signal equivalent-circuit model of a MOSFET in
which the source is not connected to the body.
2015/7/17
J. Chen
4.7 Single-stage MOS amplifier
2015/7/17

Characteristic parameters

Three configurations

Common-source configuration

Common-drain configuration

Common-gate configuration
51
J. Chen
52
4.7 Definitions




2015/7/17
Input resistance with no load
Input resistance
Rin
vi

ii
Open-circuit voltage gain
Voltage gain
vo
Av 
vi
vi
Ri 
ii
Avo 
vo
vi
RL  
RL  
J. Chen
53
4.7 Definitions



Short-circuit current gain
Current gain
i
Ai  o
ii
io
Ais 
ii
Short-circuit transconductance gain
RL  0
Gm 
v0
 Open-circuit overall voltage gain Gvo 
vsig
v0
 Overall voltage gain Gv 
vsig
v
 Output resistance Rout  x
ix v 0
io
vi
RL  0
RL  
sig
2015/7/17
J. Chen
54
4.7 Relationships


2015/7/17
Voltage divided coefficient
vi
Rin

vsig Rin  Rsig
Rin
RL
Gv 
Avo
Rin  Rsig
RL  Ro
RL
Av  Avo
RL  Ro
Ri
Gvo 
Avo
Ri  Rsig
Avo  Gm Ro
RL
Gv  Gvo
RL  Rout
Hence the appropriate configuration should be
chosen according to the signal source and load
properties, such as source resistance, load resistance,
etc
J. Chen
4.7 The common-source amplifier
55
The simplest common-source
amplifier biased with constantcurrent source.
CC1 And CC2 are coupling
capacitors.
CS is the bypass capacitor.
2015/7/17
J. Chen
4.7 Equivalent circuit of the CS amplifier
2015/7/17
56
J. Chen
4.7 Equivalent circuit of the CS amplifier
57
Small-signal analysis performed directly on the amplifier circuit
with the MOSFET model implicitly utilized.
2015/7/17
J. Chen
4.7 Characteristics of CS amplifier

Input resistance
Rin  RG

Voltage gain
Av   gm (ro // RD // RL )

Overall voltage gain Gv  

Output resistance
RG
g m ( RD // RL // ro )
RG  Rsig
Rout  ro // RD

Summary of CS amplifier



2015/7/17
58
Very high input resistance
Moderately high voltage gain
Relatively high output resistance
J. Chen
4.7 The CS amplifier with a source resistance
2015/7/17
59
J. Chen
4.7

Voltage gain
Av  

60
Small-signal equivalent circuit with ro neglected
g m ( RD // RL )
1  g m RS
Overall voltage gain
RG
g m ( RD // RL )
Gv  
RG  Rsig 1  g m RS


2015/7/17
RS takes the effect of
negative feedback
Gain is reduced by
(1+gmRS)
J. Chen
61
4.7 The Common-Gate amplifier
Biasing with constant
current source I
Input signal vsig is
applied to the source
Output is taken at the
drain
Gate is signal grounded
CC1 and CC2 are coupling
capacitors
2015/7/17
J. Chen
62
4.7 The CG amplifier
A small-signal equivalent
circuit
T model is used in
preference to the π model
Ro is neglecting
2015/7/17
J. Chen
4.7 The CG amplifier fed with a current-signal input

63
Voltage gain
Av  g m ( RD // RL )

Overall voltage gain
g m ( RD // RL )
Gv 
1  g m Rsig
2015/7/17
J. Chen
4.7 Summary of CG amplifier
64

Noninverting amplifier
 Low input resistance
 Relatively high output resistance
 Current follower
 Superior high-frequency performance
2015/7/17
J. Chen
4.7 The common-drain or source-follower amplifier
65
Biasing with current source
Input signal is applied to gate, output signal is taken at the source
2015/7/17
J. Chen
4.7 The CD or source-follower amplifier
66
 Small-signal equivalentcircuit model
 T model makes analysis
simpler
 Drain is signal grounded
Overall voltage gain
RG
ro // RL
Gv 
1
RG  Rsig r // R  1
o
L
gm
2015/7/17
J. Chen
4.7 Summary of CD or source-follow amplifier
67

Very high input resistance
 Voltage gain is less than but close to unity
 Relatively low output resistance
 Voltage buffer amplifier
 Power amplifier
2015/7/17
J. Chen
68
4.7 Summary and comparisons

The CS amplifier is the best suited for obtaining the
bulk of gain required in an amplifier.

Including resistance RS in the source lead of CS
amplifier provides a number of improvements in its
performance.

The low input resistance of CG amplifier makes it useful
only in specific application. It has excellent highfrequency response. It can be used as a current buffer.

Source follower finds application as a voltage buffer and
as the output stage in a multistage amplifier.
2015/7/17
J. Chen
4.8

The internal capacitance and high-frequency model
Internal capacitances

The gate capacitive effect





Triode region
Saturation region
Cutoff region
Overlap capacitance
The junction capacitances



69
Source-body depletion-layer capacitance
drain-body depletion-layer capacitance
High-frequency model
2015/7/17
J. Chen
4.8 The gate capacitive effect

70
MOSFET operates at triode region
Cgs  Cgd  12 WLCox

MOSFET operates at saturation region
C gs  23 WLC ox

C gd  0

MOSFET operates at cutoff region
C gs  C gd  0

C gb  WLC ox
2015/7/17
J. Chen
71
4.8 Overlap capacitance




Overlap capacitance results from the fact that the source and
drain diffusions extend slightly under the gate oxide.
The expression for overlap capacitance Cov  WLovCox
Typical value Lov  0.05  0.1L
This additional
component should be
added to Cgs and Cgd in
all preceding formulas
2015/7/17
J. Chen
4.8 The junction capacitances
•
Source-body depletion-layer capacitance
Csb 
•
Csb 0
V
1＋ SB
Vo
drain-body depletion-layer capacitance
Cdb 
2015/7/17
72
Cdb 0
V
1＋ DB
Vo
J. Chen
4.8 High-frequency model
2015/7/17
73
J. Chen
74
4.8 High-frequency model
The equivalent circuit for the
case in which the source is
connected to the substrate
(body)
The equivalent circuit model with
Cdb neglected (to simplify analysis)
2015/7/17
J. Chen
4.8 The MOSFET unity-gain frequency

75
Current gain
Io
gm

I i s(C gs  C gd )

Unity-gain frequency
gm
fT 
2 (C gs  C gd )
2015/7/17
J. Chen
76
4.11 The depletion-type MOSFET
Physical



2015/7/17
structure
The structure of depletion-type MOSFET is similar to that
of enhancement-type MOSFET with one important
difference: the depletion-type MOSFET has a physically
implanted channel
There is no need to induce
a channel
The depletion MOSFET
can be operated at both
enhancement mode and
depletion mode
J. Chen
4.11 Circuit symbol for the n-channel depletion-MOS
Circuit symbol for the nchannel depletion-type
MOSFET
2015/7/17
77
Simplified circuit symbol applicable
for the case the substrate (B) is
connected to the source (S).
J. Chen
78
4.11 Characteristic curves
Expression of characteristic equation
W
iD  k n ' （vGS  Vt ) 2
L
1
2
Drain current with vGS  0
I DSS
2015/7/17
W 2
 k n ' Vt
L
1
2
the iD–vGS characteristic
in saturation
J. Chen
4.11 The iD–vGS characteristic in saturation
79
Sketches of the iD–vGS characteristics for MOSFETs of enhancement and
depletion types
The characteristic curves intersect the vGS axis at Vt.
2015/7/17
J. Chen
4.11 The output characteristic curves
2015/7/17
80
J. Chen
81
4.11 The junction FET
D
Depletion
layer
P+
N-channel
G
D
P+
n-type
Semiconductor
G
S
S
2015/7/17
J. Chen
82
4.11 Physical operation under vDS=0
D
P+
P+
G
S
UGS = 0
2015/7/17
D
D
P+
P+
G
P+
P+
G
S
UGS < 0
S
UGS = UGS(off)
J. Chen
83
4.11 The effect of UDS on ID for UGS(off) <UGS < 0
动画
2015/7/17
J. Chen
Homework
84
 March 18, 2013:
D4.14；4.15；4.19；D4.21；
 March 25, 2013:
D4.36；D4.37；4．68；4．75；4.79；
 April 1, 2013:
4.85； 4.91；4.92；4.94；4.96；4.102
2015/7/17
J. Chen