Transcript Slide 1
Flexible Hybrid Electronic Systems Ananth Dodabalapur The University of Texas at Austin Case I Electronic Paper • Original Proposal (with organic transistor backplanes) – 1996 (Bell Labs) • First demonstration – 2000/2001(Lucent/EInk) • Commercial prototypes – Mid 2000 Case II - OFET based RFID • First proposal (organic FET based RFID – 1995 (Philips) • Working prototypes – 2005 to 2008 • Commercial production – Beyond 2010 Hybrid Flexible System Design • Communication – Wireless, wired • Circuit design • Semiconductor technology – Lumped silicon – Thin film semiconductors • Materials • Insulators, conductors • Other components and devices – Sensors, Actuators, display elements, etc.. • Fabrication – Roll-to-roll (RTR) or other Thin-Film Semiconductors • Organic and Polymer – Easiest to print – Proven compatibility with R2R – Mobilities limited to near 1 cm2/V-s* • Carbon Nanotube films – Can possess higher mobilities (near 80 cm2/V-s) for L = 100 micron devices (Rogers et al., Nature 2008) – Issues of metallic nanotubes – Separation of semiconducting nanotubes yielded 0.5-0.6 cm2/Vs. (Bao et al, Science 2008) • Inorganic Semiconductors/Nanowires – High mobilities with Indium oxide (Marks et al., Nature Materials 2006) Mobilities of organic FETs (Single Crystal, Thin-film small molecule, and polymer) – Complied from various data Single Crystal FET Mobilities 2 -4 10 P-Channel Solution Casted N-Channel Solution Casted P-Channel Vacuum Deposited N-Channel Vacuum Deposited -5 10 -6 10 1980 1985 1990 1995 Year 2000 2005 2010 0.1 0.01 Year 2007 -3 10 1 2006 -2 10 2005 -1 10 10 2004 Mobility [cm2/Vs] 0 10 P-type N-type 2003 TFT Mobility 2002 1 10 Mobility [cm2/Vs] 10 In2O3 FETs (Marks et al., Northwestern) Ion assisted deposition Mobility > 120 cm2/V-s Room temperature process Fabrication methods for Flexible Electronics • • • • • • • Ink-jet printing Gravure Flexo Screen Printing Nano-imprinting Laser-based approaches Photolithography for R2R Technical Themes for the Study • Circuit and system design • Device physics • Inorganic and organic semiconductor materials for transistors • Dielectrics and conductors • Functional devices and materials (for sensors etc) • Fabrication processes Tasks Timetable • Nov. 08 Kick Off meeting (All panelists meet with sponsors and WTEC staff at NSF) • Jan. 09 Baseline workshop at NSF (optional-this surveys US research in the field) • Feb. 09 Site visits in Asia • Mar. 09 Site visits in Europe (optional) • Apr. 09 Final Workshop at NSF • July 09 Draft Final Report goal