Transcript No Slide Title

High
Magnification
Photos of
ESD Damage
Images of Human Body Model (HBM)
ESD damage. Damage visible using
Scanning electron micrograph (SEM)
after significant enhancement by
delayering and etch enhancement.
Used with permission of
Hi-Rel Laboratories, Inc. Spokane WA 99217
www.hrlabs.com
7/12
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High Magnification Photos
of ESD Damage
Seeing ElectroStatic Discharge (ESD) damage is basically
impossible. Damage to semiconductor device structure is NOT
visible at ordinary magnifications of an optical microscope. If the
microscope is capable of 1000X-1500X magnifications, you just
might be able to “see” something. The method used, only
occasionally as there is considerable expense, is by delayering
and etch enhancement producing high magnification
photographs using a scanning electron micrograph (SEM).
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High Magnification Photos
of ESD Damage
Photo of ESD arcing from finger to component. This is not a computer
simulation. Technician was connected to a small magneto.
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High Magnification Photos
of ESD Damage
This is not HBM-ESD. Extensive damage on this transistor where
the bond has melted is typical of surges from Inductors,
Transformers, and Motors.
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High Magnification Photos
of ESD Damage
Arcing of this nature within an integrated circuit is typical of testing
damage. Human Body Model ESD does not create sufficient damage
to be seen in an optical microscope.
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High Magnification Photos
of ESD Damage
Optical photo of a large Integrated Circuit which has experienced
ESD damage to the pin noted by the arrow.
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High Magnification Photos
of ESD Damage
Higher magnification photo of pin noted by the arrow in the prior slide
This taken at 400 times magnification on a 4" X 5" photo. The damage
is noted as the "fuzz" at the end of the arrow.
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High Magnification Photos
of ESD Damage
Now you see it!! Overlying glassivation has been removed and the
surface decorated to show the ESD damage at 5,000 times magnification
in this scanning electron micrograph.
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High Magnification Photos
of ESD Damage
Techniques used to locate HBM-ESD damage in an integrated circuit.
Clockwise from the upper left optical photo at 400X shows no damage.
The upper right hand scanning electron micrograph (SEM) shows no damage.
The lower right hand image is the current flow in the device which shows
a subsurface arc between
the two metal lines. The
lower left photo is a
combination of the SEM
image and the current flow
image.
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High Magnification Photos
of ESD Damage
Scanning electron micrograph (SEM) image of the device in prior slide
after glassivation removal and surface decoration. The enlargement
2,000 times magnification.
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High Magnification Photos
of ESD Damage
Optical micrograph of an Integrated Circuit damaged by HBM ESD.
Damage has occurred in the large thin oxide metal capacitor in the upper
center of the image. However, no physical damage is visible.
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High Magnification Photos
of ESD Damage
Scanning electron micrograph (SEM) image of the ESD damage after
removal of the capacitor metallization. Note the characteristic eruption thru
the oxide. Magnification is 10,500 times.
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High Magnification Photos
of ESD Damage
Optical image of an Integrated Circuit damaged by HBM ESD. The
second pin from the bottom left is good and its mirror image, second from
the right is damaged. However, no physical damage is visible.
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High Magnification Photos
of ESD Damage
Scanning electron micrograph (SEM) image of the damage site on the
Integrated Circuit shown in prior slide. Metal has been removed expose
the underlying damage site. Magnification is 6,450 times.
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