Transcript Internal Memory

Computer Engineering II
4th year, Communications Engineering
Winter 2014
Dr. Tamer Samy Gaafar
Dept. of Computer & Systems Engineering
Course Web Page
http://www.tsgaafar.faculty.zu.edu.eg
Announcements
• Eng. Mohamed Atef will take the last 50 minutes of
today’s class to cover the material required for
Lab1.
• Lab/Assignment Groups are posted or not?.
• Lab1 is now posted.
• Before your lab day, get prepared by reading the
posted material very well so that you don’t waste
much of your lab time trying to figure out what is
going on.
• Today’s lecture and lab presentation are posted.
Lecture 2
Chapter 5. Internal Memory Technology
(Cont.)
4 x 4 DRAM
Typical 16 Mb
DRAM (4M x 4)
•
•
•
•
Logically, 4 square arrays of 2048 x 2048 elements.
Each horizontal line connects to the Select terminal of each cell in its row.
Each vertical line connects to the Data in/Sense terminal of each cell in its column.
Reduces number of address pins
— Multiplex row address and column address
— 11 pins to address (211=2048)
— Adding one more pin doubles range of values so x4 capacity
Refreshing
•
•
•
•
Refresh circuit included on chip.
Disable chip.
Count through rows.
Data is read out and written back into the same
location  each cell is refreshed.
• Takes time.
• Slows down apparent performance.
Chip Packaging
•
•
•
•
8-Mbit EPROM chip, 1M x 8.
One-word-per-chip package.
Address: A0-A19, Data: D0-D7
Vcc; power, Vss: ground, CE: chip
enable, Vpp: programming voltage.
•
•
•
•
•
16-Mbit DRAM, 4M x 4.
Updatable  data pins in/out.
WE: Write Enable
OE: Output Enable
NC: No Connect  even # of pins
Module
Organization
256 k byte memory
• Available: 256 k x 1-bit chips
Module Organization (2)
1 M byte memory • Available: 256 k x 1-bit chips
Error Correction
• Semiconductor memory is subject to errors.
• Hard Failure
—Permanent physical defect.
—Memory cells cannot store data: stuck at 0 or 1, or
switching.
—Caused by harsh environments, manufacturing
defects, or wear.
• Soft Error
—Random, non-destructive event that alters contents
of one or more memory cells.
—No permanent damage to memory.
—Caused by power supply problems or alpha particles.
• Detected/corrected using Hamming error
correcting code.
Error-Correcting Code Function
Syndrome word
Hamming Error-Correcting Code
Data bits: 1110
A
1
1
0
1
Discrepancies
Parity bits
B
1
0
0
0
C
Chosen so that total number of 1s in each circle is even.
By checking the parity bits, discrepancies are found  error
can be easily found and corrected.
How many check bits to use?
• The comparison logic receives as input two K-bit
values.
• A bit-by-bit comparison is done by taking the XOR
of the two inputs  syndrome word.
• Each bit of the syndrome word is 0 if there was a
match in that position, otherwise, it is 1.
• Syndrome word is K bits wide  range 0 : 2K -1.
• The value 0 indicates no error  2K -1 are left to
indicate which bit was in error.
• 2K -1 ≥ M + K
Hamming Code
2K - 1 ≥ M + K  2K ≥ 9+K  K = 4
1 0 0 1 1 0 1 0
12 11 10
9
8
7
6
5
4
3
Data bits
2
1
0 1 0 1 ?
1 0 1
1 0 0 1 ?
? 1
?
0
1
0
Bit position 8
1
2
4
1
1
0
0 =?
1: 0
Bit position 8:
2:
4:
1
Hamming Code (2)
12 11 10
9
8
7
6
5
4
3
2
1
1 0 0 0
1 ?
0 1 0 1 ?
1 0 1
? 1
?
•
•
•
•
•
•
•
Assume error in bit 9.
Recompute the check bits.
Bit 1 = 0 (error).
Bit 2 = 1.
Bit 4 = 1.
Bit 8 = 1 (error).
Error is in bit position = 1 + 8 = 9  flip it
(correction).
Reading Material
• Stallings, chapter 5, pages 164-173.