Transcript 1Mb Quad SPI nvSRAM NPI Prese..

New Product Introduction:
1Mb Quad SPI nvSRAM
Eliminate Batteries and Reduce Pin Count
While Maintaining High-Speed Nonvolatile RAM Performance
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1Mb Quad SPI nvSRAM New Product Introduction
Demand for Reliability and Performance
Is Driving Nonvolatile RAM Growth
The Global TAM1 forecast for Nonvolatile RAM (NVRAM) is $590M in 20142
with a 10% CAGR through 2018
Cypress’s 1Mb Quad SPI3 nvSRAM applications include:
Computing and networking
Industrial automation
RAID storage
These applications use high-performance systems that require instant, high-reliability
data capture on power loss
These systems need the data throughput performance of high-speed parallel NVRAMs and
the reduced pin count of Quad SPI interfaces preferred by designers
Customers that buy these systems prefer battery-free NVRAM solutions
Current NVRAM solutions, such as Battery-Backed SRAM, cannot meet all of these requirements
Take advantage of the industry shift from parallel Battery-Backed SRAM to Quad SPI NVRAM
1 Total
Available Market
Research, Cypress Semiconductor research
3 Quad Serial Peripheral Interface
2 Web-Feet
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Cypress: No. 1 in NOR Flash, SRAM, NVRAM
Comparison to Competitors’ Memory Product Portfolios
Product Category
Cypress
Competitors
ISSI
No. 1
NOR
Flash





Highest Read Bandwidth
102 MBps
Fastest Program/Erase
Serial NOR Flash





Highest Read Bandwidth
160 MBps
Fastest Program/Erase


1
QDR®-IV Synchronous
SRAM

Asynchronous SRAM
with ECC2

MicroPower SRAM

Highest Read Bandwidth 333 MBps
Highest RTR (random
transaction rate)
2.1 GT/s

Highest reliability
<0.1 FIT3

Lowest standby current
1.5 µA
Lowest standby current
100 µA
Serial F-RAM™

Parallel nvSRAM5

Fastest NVRAM6
20 ns

Highest-density
NVRAM6
16GB
4
No. 1
NVRAM
Metrics
Parallel NOR Flash
HyperFlash™
No. 1
SRAM
Micron Toshiba Winbond Macronix Fujitsu
Performance
Advantage
7
AGIGARAM®

Cypress has the broadest portfolio of high-performance memories for embedded systems
1
A Cypress NOR Flash Memory product family that offers higher bandwidth than Quad SPI NOR
Flash Memory with one-third the number of pins of parallel NOR Flash Memory
2 Error-correcting code
3 Failures In Time (billion hours)
4 Ferroelectric RAM
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Nonvolatile SRAM
Nonvolatile memory that provides direct access to read and write
to any memory location in any random order
7 A Cypress brand name
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3b
Terms You Will Hear Today
Nonvolatile Memory (NVM)
Memory that retains data on power loss
Nonvolatile Random-Access Memory (NVRAM)
An NVM that allows direct access to stored data in any random order
Write Endurance
The number of times an NVM cell can be rewritten before it wears out
Silicon Oxide Nitride Oxide Silicon (SONOS)
A transistor with a polysilicon gate (S), an Oxide Nitride Oxide (ONO) gate dielectric and a Silicon substrate (S) used
to create a Nonvolatile Memory storage cell
Nonvolatile Static Random-Access Memory (nvSRAM)
Fast SRAM memory with a SONOS NVM cell embedded in each SRAM cell to retain data on power loss
Quad Serial Peripheral Interface (Quad SPI)
A high-speed interface that combines four individual SPI channels to increase serial bus throughput
Electrically Erasable Programmable Read-Only Memory (EEPROM)
A common NVM that uses floating-gate technology to store data
Battery-Backed SRAM (BBSRAM)
SRAM memory connected to a battery to retain data on power loss
Restriction of Hazardous Substances (RoHS)
A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components
Redundant Array of Independent Disks (RAID)
A storage technology that uses two or more disk drives for redundancy
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High-Speed NVM Design Problems
1. Many systems require fast NVMs with high Write Endurance
Traditional EEPROM and flash NVMs have slow write times (>1 ms) and limited Write Endurance
Low-power asynchronous SRAMs have fast access times but require battery backup to store data on power loss
Most NVRAMs do not offer a 16-pin serial interface with enough performance to match a 44-pin high-speed parallel interface
2. BBSRAM solutions force undesirable tradeoffs
Batteries consume board space and require a power-management controller, increasing system cost and complexity
Coin-cell batteries have a three-year lifetime, which adds cost by requiring system maintenance and downtime
After a power outage, data is lost if the battery is drained before power is restored, so repairs must be made quickly
Batteries contain heavy metals that violate RoHS regulations
3. Many systems require accurate time-stamping
Accurate external real-time clock chips, used to time-stamp data, add cost and complexity
Cypress’s 1Mb Quad SPI nvSRAM solves all these problems
Provides ≥24MBps random read/write access time with unlimited Write Endurance
Offers a 16-pin Quad SPI interface with a 108-MHz clock rate, exceeding the throughput of a 44-pin x16, 40-ns parallel interface
Stores data reliably on power loss without batteries, even in magnetic fields
Eliminates the need for an external power-management controller
Offers an integrated, high-accuracy, real-time clock option
Cypress’s 1Mb Quad SPI nvSRAM simplifies your design by eliminating batteries and reducing pin count
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Quad SPI nvSRAM Is a Better Solution
Simplify a complex
BBSRAM-based design…
By choosing a Quad SPI nvSRAM
as your NVM solution…
To produce a high-speed, highreliability serial NVRAM solution
for a mission-critical application.
Low-power asynchronous SRAM
Computing and Networking
Industrial Automation
RAID Storage
Battery required to store data
on power loss
Quad SPI nvSRAM solution with integrated RTC
Extra board space for battery
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Cypress 1Mb Quad SPI NVRAM
Solution vs. Competition’s
Feature
Quad SPI
nvSRAM
CY14x101xS
Micropower
SRAM + Battery
IS62WV1288DBLL
Quad SPI
MRAM1
MR10Q010
Max Clock Rate
108 MHz
NA
104 MHz
Random Data Throughput2
24 MBps
22 MBps
23 MBps
Burst Data Throughput3
54 MBps
22 MBps
52 MBps
Package Pins
16
32
16
Controller Pins4
6
29
6
Active Write Current
38 mA at 108 MHz
NA5
220 mA at 104 MHz
Sleep Current
10 µA
10 µA (standby)
100 µA
Magnetic Field Immunity
Yes
Yes
No6
Real-Time Clock Option
Yes
No
No
1 Magnetoresistive
Random Access Memory that uses magnetic elements to store data
random read or write in 4-byte burst
3 Full 1Mb memory burst write or read
4 Pins required to connect to an MCU
5 No direct comparison due to interface differences; this SRAM part consumes 8 mA at 22 MHz
6 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids
2 Fully
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nvSRAM Portfolio
High Density | High Speed
I2C nvSRAM
SPI nvSRAM
SPI nvSRAM
CY14V116F/G
16Mb; 3.0, 1.8 V I/O
30 ns; ONFI3 1.0
x8, x16; Ind1
CY14B116R/S
16Mb; 3.0 V
25, 45 ns; x32; Ind1
RTC2
Higher Densities
DDRx6 nvSRAM
NDA Required
Contact Sales
CY14B108K/L
8Mb; 3.0 V
25, 45 ns; x8; Ind1
RTC2
CY14B108M/N
8Mb; 3.0 V
25, 45 ns; x16; Ind1
RTC2
CY14B116K/L
16Mb; 3.0 V
25, 45 ns; x8; Ind1
RTC2
CY14B116M/N
16Mb; 3.0 V
25, 45 ns; x16; Ind1
RTC2
CY14B104K/LA
4Mb; 3.0 V
25, 45 ns; x8; Ind1
RTC2
CY14V104LA
4Mb; 3.0, 1.8 V I/O
25, 45 ns; x8; Ind1
CY14B104M/NA
4Mb; 3.0 V
25, 45 ns; x16; Ind1
RTC2
CY14V104NA
4Mb; 3.0, 1.8 V I/O
25, 45 ns; x16; Ind1
CY14V101PS
1Mb; 3.0, 1.8 V I/O
108 MHz QSPI5; Ind1
Ext. Ind7; RTC2
CY14V101QS
1Mb; 3.0, 1.8 V I/O
108 MHz QSPI5; Ind1
Ext. Ind7
CY14B101I
1Mb; 3.0 V
3.4 MHz I2C; Ind1
RTC2
CY14B101KA/LA
1Mb; 3.0 V
25, 45 ns; x8; Ind1
RTC2
CY14V101LA
1Mb; 3.0, 1.8 V I/O
25, 45 ns; x8; Ind1
CY14B101MA/NA
1Mb; 3.0 V
25, 45 ns; x16; Ind1
RTC2
CY14V101NA
1Mb; 3.0, 1.8 V I/O
25, 45 ns; x16; Ind1
CY14B101P
1Mb; 3.0 V
40 MHz SPI; Ind1
RTC2
CY14B512P
512Kb; 3.0 V
40 MHz SPI; Ind1
RTC2
CY14B512I
512Kb; 3.0 V
3.4 MHz I2C; Ind1
RTC2
CY14B256KA/LA
256Kb; 3.0 V
25, 45 ns; x8; Ind1
RTC2
CY14V/U256LA
256Kb; 3.0, 1.8V I/O
35 ns; x8; Ind1
CY14E256LA
256Kb; 5.0 V
25, 45 ns; x8; Ind1
STK14C88-5
256Kb; 5.0 V
35, 45 ns; x8; Mil4
CY14B256P
256Kb; 3.0 V
40 MHz SPI; Ind1
RTC2
CY14B256I
256Kb; 3.0 V
3.4 MHz I2C; Ind1
RTC2
STK11C68-5
64Kb; 5.0 V
35, 55 ns; x8; Mil4
STK12C68-5
64Kb; 5.0 V
35, 55 ns; x8; Mil4
CY14B064P
64Kb; 3.0 V
40 MHz SPI; Ind1
RTC2
CY14B064I
64Kb; 3.0 V
3.4 MHz I2C; Ind1
RTC2
64Kb - 256Kb
512Kb - 16Mb
Parallel Parallel
nvSRAM
nvSRAM
grade −40ºC to +85ºC
clock
3 Open NAND flash interface
Military grade −55ºC to +125ºC
Quad serial peripheral interface
6 Double Data Rate
1 Industrial
4
2 Real-time
5
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Higher Densities
QSPI5 nvSRAM
NDA Required
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NEW
7
NEW
Extended Industrial grade −40ºC to +105ºC
Production Sampling Development Concept
Status
Availability
QQYY
QQYY
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1Mb Quad SPI nvSRAM
Applications
Block Diagram
Computing and networking
Industrial automation
RAID storage
VCAP2
1Mb Quad SPI
nvSRAM
Store
Control
2
Control
Logic
Features
QSPI I/Os
Quad SPI interface: 108 MHz
Unlimited Write Endurance
One million store cycles on power fail
Data retention of 20 years at 85°C
Operating voltages: 3.0 V, 1.8-V I/O
Low standby (280-µA) and sleep (10-µA) currents
Industrial temperature range: -40°C to +85°C
Extended Industrial temperature range: -40°C to +105°C
Integrated, high-accuracy real-time clock (RTC)
Package: 16-SOIC, 24-BGA
Store/Recall
Control
SRAM Array
4
I/O
Control
Recall
Software
Command
Detect
XIN1
XOUT1
RTC
VRTC
HSB3
Availability
Collateral
Preliminary Datasheet:
Contact Sales
Sampling:
Production:
1
2
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Power
Control
SONOS Array
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Q3 2015
Q4 2015
Crystal connections
External capacitor connection
1Mb Quad SPI nvSRAM New Product Introduction
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Here’s How to Get Started
1. Download our App Notes: Cypress Nonvolatile Products App Notes
2. Register to access online technical support
3. Request an advance datasheet: Contact Sales
RAID Card
by LSI Logic
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Programmable Logic Controller
by Keyence
1Mb Quad SPI nvSRAM New Product Introduction
Router
by Cisco
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APPENDIX
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nvSRAM Product Selector Guide
1Mb Quad SPI
nvSRAM Part Number
CY14V101QS-SF108XI
Clk Freq
108-MHz
Supply
Voltage
3.0 V
I/O
Voltage
1.8 V
Interface
Quad SPI
Grade
Industrial
CY14V101QS-SF108XQ
Quad SPI
108-MHz
3.0 V
1.8 V
CY14V101PS-SF108XI
Quad SPI
108-MHz
3.0 V
CY14V101QS-SE108XI Quad SPI
CY14V101QS-SE108XQ Quad SPI
108-MHz
108-MHz
CY14V101QS-BK108XI
Quad SPI
CY14V101QS-BK108XQ Quad SPI
Temp
-40 to 85°C
Package
16-SOIC
RTC
No
Ext. Industrial -40 to 105°C
16-SOIC
No
1.8 V
Industrial
16-SOIC
Yes
3.0 V
3.0 V
1.8 V
1.8 V
Industrial
-40 to 85°C
Ext. Industrial -40 to 105°C
16-SOIC
16-SOIC
No
No
108-MHz
3.0 V
1.8 V
Industrial
24-BGA
No
108-MHz
3.0 V
1.8 V
Ext. Industrial -40 to 105°C
24-BGA
No
-40 to 85°C
-40 to 85°C
1Mb QPSI nvSRAM Part Numbering Decoder
CY 14 V 101 QS – SF 108 X I
Temperature Range: I = Industrial, Q = Ext. Industrial
Pb Content: X = Pb-free
Frequency: 108 = 108 MHz
Package: SF = 16-SOIC Standard; SE = 16-SOIC Custom; BK = 24-BGA
Interface: QS = Quad SPI; PS = Quad SPI with RTC
Density: 101 = 1Mb nvSRAM
Voltage: V = 3.0 V, 1.8 V I/O
Marketing Code: 14 = nvSRAM
Company ID: CY = Cypress
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References and Links
Video: nvSRAM Basics Video
nvSRAM datasheets: 1Mb nvSRAM, 4Mb nvSRAM, 8Mb nvSRAM, 16Mb nvSRAM (Preliminary)
nvSRAM w/ONFI datasheet: 16Mb nvSRAM (Preliminary)
nvSRAM w/Real-Time Clock datasheets: 1Mb nvSRAM, 4Mb nvSRAM, 8Mb nvSRAM,
16Mb nvSRAM (Preliminary)
App Note: Comparison Between nvSRAM and BBSRAMs
App Note: Replacing 4Mbit (256K x16) MRAM with Cypress nvSRAM
App Note: nvSRAM with RTC Design Guidelines
Website: Cypress Parallel nvSRAMs
nvSRAM Product Selector Guide: nvSRAM Product Selector Guide
Product roadmap: Cypress Nonvolatile RAM
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1Mb QSPI nvSRAM Solution Value
Competitor
1Mb low-power SRAM: ISSI IS62WV1288DBLL
Price: $1.641
Competitor
$1.64
Battery + Casing
$2.12
BOM Integration
Battery + casing: Panasonic CR2477 battery + Memory
Protection Devices Inc. BH1000G-ND casing
Price: $2.121
Power management controller: Maxim MXD1210ESA
Price: $4.012
Additional Value
$4.01
$6.13
BOM Integration Value
22-µF External Capacitor
-$0.22
$9.09
Field Battery Replacement
Cost
22-µF external capacitor: Panasonic ECS-F0JE2262B
Price: -$0.221
Field battery replacement cost
Price: $9.093
Board Space Saving
Total Additional Value
Board space saving
Value Added: $0.124
1
Power Management
Controller
$0.12
$8.99
Total Value Delivered
Digikey website 1ku pricing on 08/07/2014
Mouser website 1ku pricing on 08/07/2014
3 $4.92 (four times in 15 years at $1.23 per battery), plus labor cost: $4.17 (four times in 15 years
with labor at $50/hour and replacement time conservatively estimated at 75 seconds/battery)
4 12.25 square centimeters at $0.01 per square centimeter
5 1ku web pricing on Cypress.com
$16.76
Target Cypress Solution: CY14V101QS-SF108XI
Total Cost: $7.985
52% Total Savings: $8.78
2
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