Transcript Rapid Power MOSFET Switching

Rapid Power MOSFET
Switching
US Patent #7378898
ComLSI, Inc
Rapid Power MOSFET Switching
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Higher bandwidth at higher efficiency is a continuing requirement in power
conversion and power management electronics, given the continuing trend toward
more compact and portable systems.
A constraint for efficient power management circuits is speed at which power
transistors can be switched and energy consumed in switching these transistors
ON and OFF. Patent 7378898 teaches switching commonly employed MOSFET
power transistors at high frequencies with reduced conduction and switching loss.
The technique applies to all DC-DC and POL power conversion products with
combined TAM exceeding multi-Billion $$.
The technique may also be employed to speed switching of Power Gating MOSFET
devices embedded in chips, as well as in Active Noise regulators, a strategic
product for ultra-low-voltage systems.
US Patent #7378898 protects the only known circuit solution to improving MOSFET
power transistor switching.
The patent execution history is clean with thorough prosecution by the USPTO. No
obligations or encumbrances exist.
Oct. 23, 2009
ComLSI, Inc.
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Applications of RPTS: ANR
CSw
HV
L_anr
ANR
LV
L_path
DSw
C_anr
VLoad
ILoad
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Active Noise Regulators (ANR’s), and symbiotic high-frequency switched power converters
maintain power integrity in rapidly switched regions of a ULSI device, permitting ultra-lowvoltage operation and corresponding low energy consumption.
Size: comparable to IDC caps on a processor package (< 1mm^2), fabricated in a process 2 to
3 gens. behind the USLI component; scales with capacitors used
Cost: for 1mm^2 area, @ $600/8” wfr, ~90% yield, CSP/WFLCSP  $0.05
Cost – low volume: for the same device above, ~$0.10
Electrical specs.: 40 to 100MHz converters / noise suppression frequency estimated feasible
(ref: Intel® CMOS Voltage Regulator design effort, “Accelerated Regulation”)
ANR patent: Active interposer: US 7291896 also available. More info on ANR’s
Oct. 23, 2009
ComLSI, Inc.
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Applications of RPTS: DC-DC
HS
ths(on)
Vi
Vo
L
Ci
LS
iL
Co
IL
IL,avg
tls(on)
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DC to DC converters (RED blocks in a portable system architecture shown) employ
switched MOSFETs for high-side (HS) and low-side (LS) function in buck, boost, and
buck-boost converters. Both HS and LS conduction and switching losses diminish
DC-DC efficiency. RPTS significantly reduces HS and LS switching and IL2•RON
conduction losses
Size: dependent upon type of device, operating voltages, desired ‘ON’ resistance
and gate charge, current carrying capacity, and packaging
Electrical aspects: Simultaneous RDSON and QG reduction with RPTS
Manufacturing: FET body node not shorted with source, package pin used, pkg
cost adder ~$0.005.
Oct. 23, 2009
ComLSI, Inc.
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Applications: Power Gating
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Power gating switches employed for Voltage Domains (different colors in the
system block diagram shown) in nanoscale SoC’s and processors for leakage shutoff. RPTS reduces Power Gating energy loss and enhances speed / frequency of
gating
Size: Reduced RDSON reduces power gating device area overhead on chip
Performance: QG reduction with RPTS increases power gating frequency and chip
energy savings
Design / Manufacturing: Body bias circuit reference area, 1 per chip
Oct. 23, 2009
ComLSI, Inc.
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Other & emerging applications
• Solid-state lighting/dimming
• Motor drive electronics
Oct. 23, 2009
ComLSI, Inc.
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