Transcript ECE3110 Prelabs

Clemson ECE Laboratories
ECE 311 – Electronics Lab I
Pre-labs for ECE 311
Created by Steven Chambers in Fall 2012
Last Updated: 12/20/2012
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LABORATORY 0 –
LABORATORY
DEMONSTRATION
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Introduction to Laboratory 0
• Curve Tracer
– Plots I-V curve for two and three terminal devices
– Can plot a family of curves for different bias
conditions
– Used in this lab to give characteristics of diodes
and transistors
– Current/Voltage/Power limitations used to prevent
destruction of device under test (DUT)
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Background Information
• Bipolar Junction Transistor (BJT)
– Three terminal device (Emitter, Base, Collector)
– Base current controls Collector-Emitter current
– I-V curve
• Y-axis: IC
• X-axis: VCE
• Family of curves
represents different
IB values
• As IB increases,
IC increases for the
same VCE value
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Contact Information
• Instructor:
Name:
Email:
Office:
Phone:
Office Hours: As needed (email for appointment)
• Lab Coordinator:
Name: Dr. Timothy Burg
Email: [email protected]
Office: 307 Fluor Daniel (EIB)
Phone: (864)-656-1368
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Mandatory Safety Video
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Preparations for Next Week
• B2SPICE
– Circuit simulation software
– Uses computer models to predict circuit behavior
– All parts used are considered ideal
• Observed value will differ from simulated value, but
still good estimation
– Tests most often used in this lab are DC Sweep,
Transient testing, and frequency sweep
– DC Sweep used for both simulations of next weeks
lab
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Preparations for Next Week
• For Part 2: Click Sweeps tab under
DC Sweep
• Then click Set up Sweeps
The dialogue
to the right will
appear.
Use these
settings to
properly
sweep the R
from 100 to
1000 to 10k
ohms.
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LABORATORY 1 – DIODE
CHARACTERISTIC
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Introduction to Lab 1
• Diode – Allows current to flow in
one direction under forward bias
• rd – dynamic forward resistance
rd = ΔVD/ ΔID (reciprocal of I-V slope)
• RD – static forward resistance
RD = VD/ID
• Vγ – cut-in voltage
point where appreciable current conduction begins
• n – ideality factor
dependent upon physical characteristics of diodes
• VBR – breakdown voltage
• IS – reverse saturation current
current that flows under reverse bias
• VT – thermal voltage = 0.0285V at room temperature
-
VD
+
ID
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Diode Characteristic
• Part 1A will replicate forward bias on curve tracer
• Part 1B will replicate reverse bias on a Zener diode
– Zener diodes have a lower VBR because they are
designed to keep a constant voltage drop across it
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Ideality Factor
• “The ideality factor, n, depends on the type of
semiconductor material used in the diode, the
manufacturing process, the forward voltage, and the
temperature.”
• Its value generally varies between 1 and 2. For
voltages less than about 0.5 V, n ~ 2; for higher
voltages, n ~ 1.
(experiment shows values typically 1.15 ≤ n ≤ 1.2)
• The ideality factor, n, can readily be found by plotting the
diode forward current on a logarithmic axis vs. the diode
voltage on a linear axis.
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Finding Ideality factor, n
Pick two points
where currents
are 10 times
different
Find ∆𝑉𝐷 = ?
∆𝑉𝐷
= ln 10 = 2.3
𝑛𝑉𝑇
𝑉𝑇 = 0.0258 𝑉
∆𝑉𝐷 = 2.3 × 𝑛 × 𝑉𝑇
∆𝑉𝐷 = 2.3 × 𝑛 × 𝑉𝑇 = 2.3 × 𝑛 × 0.0258 = 0.0593 𝑛 = 𝑛 × 59.3 𝑚𝑉
∆𝑽𝑫
𝒏=
𝟓𝟗. 𝟑𝒎𝑽
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Cut-in Voltage Vγ:
0.4V to 0.7V for silicon
0.2V to 0.4V for germanium
“If the applied voltage exceeds Vγ, the diode current increases rapidly.”
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Diode Resistance
Three diode resistances are commonly calculated:
• DC or Static forward resistance, RF or RD
• AC or Dynamic forward resistance, rf or rd
Applying the diode equation and differentiating
• Reverse resistance, rr
– the reciprocal of the slope of the reverse characteristic, prior to breakdown
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Junction Capacitance of Diode ( Cj )
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Experiment:
Measurement of diode characteristics
• Forward I-V Characteristic
– Use the curve tracer to obtain the forward
characteristics of the silicon 1N4004 diode.
– follow the steps mentioned in lab manual for
selecting Vmax =2V, Imax = 2mA and Pmax =0.4W
– Fill out table 1.1 and perform calculations to find
RF and rd
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Reverse I-V Characteristic
• Use Zener diode (this one looks transparent)
– Note the reverse breakdown voltage
(around -14.6V)
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SIMPLE DIODE CIRCUIT
Build the circuit
Measure the output voltage, V0
Vary the Vin from 0V to 5V for R= 100Ω
change R = 1k Ω and 10k Ω
Fill out table 1.2
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Preparations for Next Lab
• Post Lab 1
– All questions under Lab Report section (Part 1 and
Part 2) should be answered
• Pre Lab 2
– Figures 2.3 and 2.5 will be simulated
– Use a sinusoidal voltage source set to 60 Hz and 4
volt amplitude (8 V peak to peak)
– Run transient test for 4 periods (f = 60 Hz T = 1/f
start time = 0)
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LABORATORY 2 – POWER
SUPPLY OPERATION
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Half-wave Rectifier
• Diode forward biased for Vin > Vγ
• Diode reverse biased for Vin < Vγ
• Allows current to conduct for roughly half of AC
cycle
• Vm = Vp - Vγ
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Full-wave Rectifier
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•
•
•
•
D2 and D3 forward biased when Vin > 2Vγ
D1 and D4 forward biased when Vin < 2Vγ
Vm = Vp – 2Vγ
Output frequency is twice that of input
Output does not share common ground with input
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Filtering
• Adding a capacitor in parallel with load resistor
creates a filter
• Capacitor will charge up on first half of cycle then
discharge slowly based on capacitance
• This creates a voltage source with ripple
• Vr = Vm – Vmin
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Preparations for Next Lab
• Post Lab 2
– 3 questions under Lab Report
• Pre Lab 3 – First Design Lab
– I will split the class. Half the class will come for
the first hour. Other half will come for the second.
– Bring your design calculations with you to lab
– Please print ECE 311 – Lab 3 Lab Summary page
from lab manual and bring with you to next lab.
This will be turned in as your post lab prior to
leaving lab next week.
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LABORATORY 3 – POWER
SUPPLY DESIGN
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Power Supply Design Calculations
• This lab is to be completed individually
• Remember Vin is measured after the source resistor Rs
• Fill out Lab Summary sheet and turn in before your
leave
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Preparations for Next Lab
• Pre Lab 4
– Simulate circuits 4.5(a) (Vb = 0 and 2 V), 4.6(a)
(Vb = 0 and 2 V), 4.7, and 4.8
– There is an error in the prelab statement. DO NOT
SIMULATE FIGURE 4.4(a).
• Lab Report: You are to complete a formal lab report
on your choice of Lab 1-3. You have 2 weeks to
complete the report. It is to be submitted
electronically before 5 PM on 10/9.
– Follow report format in the lab manual and look to
the rubric uploaded on blackboard to see how it
will be graded
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LABORATORY 4 – DIODE
CLIPPERS AND CLAMPERS
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Clipper
• Circuit that limits the output voltage to either an upper or
lower limit (or both) through the use of diodes and voltage
sources
• Diode begins conducting and holds output to a desired level (V
+ Vγ in the configuration seen below)
• Diode and battery orientation determine whether circuit is
positive or negative clipper
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Clamper
• Circuit that shifts the DC value of an input voltage through the
use of a diode and capacitor
• Diode conducts on negative half cycle to allow capacitor to
charge
• Once charged, capacitor passes AC signal shifted by the charge
built on C
• Diode polarity determines positive or negative clamping
(positive pictured below)
• RC time constant must be much larger than input signal period
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Note on circuit connection
• The NI-Elvis VPS is internally grounded
• This means no physical wire connection on your
board is required to ground the voltage source
Connection already made
within NI-Elvis board
• For Vb = 0, connect diode straight to ground
• For non-zero Vb, connect diode to VPS supply + or
supply -
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Preparations for Next Lab
• Post Lab 4
– 3 questions under Lab Report
• Pre Lab 5
– Be familiar with BJT transistor operation and read
through lab
• I do not require you to bring in graph paper
• Remember: Lab report due next week
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LABORATORY 5 – BIPOLAR
JUNCTION TRANSISTOR
CHARACTERISTICS
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Bipolar Junction Transistor
• Three terminal device: Collector, Emitter, Base
• Collect-Emitter current controlled by B-E current
• Four regions of operation {NPN (PNP)}:
– Cutoff – Both P-N Junctions reverse biased
– Saturation – Both P-N Junctions forward biased
– Forward Active – B-E (B-C)
forward biased, B-C (B-E)
reverse biased
– Inverse Active – B-E (B-C)
reverse biased, B-C (B-E)
P N
N P N
forward biased
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Output Characteristic
Forward Active
Saturation
Cutoff
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Transistor Parameters
•
•
•
•
•
•
•
hFE = IC/IB = β – dc current gain
hfe = ΔIC/ΔIB = βo – small signal (ac) current gain
hie = ΔVBE/ΔIB = rπ – input resistance
hoe = ΔIC/ΔVCE – output conductance
hre = ΔVBE/ΔVCE – voltage feedback ratio
hie can be approximated from βVT/ICQ
VA – Early Voltage
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Preparations for Next Lab
• Post Lab 5
– 6 questions under Lab Report
• Pre Lab 6
– Figure 6.2 DC Sweep to find Q point
– Figure 6.1 Transient analysis for various R
– Use transient setup given in pre lab
• Remember: Electronic copy of lab report due tonight
by 5 pm
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LABORATORY 6 – BJT
COMMON-EMITTER CIRCUIT
BIAS
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Common Emitter Bias Circuit
• Emitter is used as a reference point for both input and
output
• R1 and R2 form a bias network to set a desired base
current
• RC used to set output
voltage levels
• RE helps reduce circuit
variation with β but also
reduces AC voltage gain
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Q-Point
• Bias circuit is used to select an operating (Q) point
• Q point should be well into the forward active region
to get a properly behaving amplifier circuit
• When adding a small signal AC voltage, the output
voltage will shift with the AC input based on gain
• If the Q point is too close to saturation or cutoff,
output waveform will distort and circuit will not
behave as a proper amplifier
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Common Emitter Amplifier
• AC input signal can be added to base terminal (C1
used to filter out any DC component)
• VO is takes from collector terminal to ground (C2
once again used to remove DC component)
• CE added to
increase AC
gain; Emitter is
shorted to ground
for AC – We will
explore this more
next week in
Lab 7
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Preparations for Next Lab
• Post Lab 6
– 4 questions under Lab Report
• Pre Lab 7
– Simulate circuit 7.1 for the 10 different
configurations given in the lab manual
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LABORATORY 7 – BJT
COMMON-EMITTER CIRCUIT
VOLTAGE GAIN
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Common Emitter Amplifier
• Once Q point is established, small AC signal can be
added to base
• This signal is amplified and seen at the collector
terminal
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Hybrid-π Equivalent Circuit
•
•
•
•
Used to model BJT response to small signal AC input
gm = ICQ/VT
Ro = VA/ICQ
Rπ = β/gm
• When applied to overall circuit, can provide small
signal voltage gain from input vs output transfer
function
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Effect of Emitter Capacitor
• With CE:
• Without CE:
• With CE, two sides of circuit only share a common
ground; without CE, RE adds a feedback loop which
produces a voltage divider, reducing Vπ and the gain
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Frequency Response
• Capacitors in this circuit have been selected so they
essentially provide 0 impedance at circuit operating
frequency.
• As frequency is changed, the capacitors start to
produce an appreciable impedance; thus, lowering the
gain of the circuit.
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Preparations for Next Lab
• Post Lab 7
– 4 Questions under Lab Report
• Pre Lab 8
– 2 Hour group design lab – Each student should
read through and do design calculations
individually and perform simulations
• Lab Report 2: Due 11/13 by 5:00 PM, electronic
submission
– Pick from Labs 4-7
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LABORATORY 8 – BJT
COMMON EMITTER DESIGN I
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Equivalent Circuit
• RO ignored
• Mesh analysis
provides Av
• Design Calculations:
–
–
–
–
–
–
hib + RE = 235 Ω
Rac = 2.585k Ω
Rdc = 4.935k Ω
ICQ = 1.33 mA
VCEQ = 3.438 V
VBB = 1.014 V
–
–
–
–
–
–
–
β = 200
IBQ = 6.649 µA
hie = 3.91k Ω
hib = 19.55 Ω
RE = 215 Ω
R2 = 4.785k Ω
R1 = 42.386k Ω
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Preparations for Next Lab
• Post Lab 8: 2 Questions under Lab Report
– Do not do a full report for question 1. Simply
provide me the design calculations, results, and
comparison.
• Pre Lab 9: Individual Design Lab
– Bring calculations with you to next lab
– Print Lab Summary to turn in as Post Lab 9
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LABORATORY 9 – BJT
COMMON EMITTER DESIGN
II
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Equivalent Circuit
• Ro ignored
• Mesh analysis
•
•
•
•
•
Vπ = Vs
Vo = -(RC//RL)gmVπ
Av = -(RC//RL)gm
gm = ICQ/VT
When RC = RL, Av = -RCICQ/2VT
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Design Calculations
•
•
•
•
•
•
•
•
•
•
Rac = 2.35k Ω
ICQ = 1.277 mA
VCEQ = 3V
VBB = 1.014 V
β = 200
IBQ = 6.649 A
hie = 4.073k Ω
hib = 20.37 Ω
Rdc = 5.797k Ω
RE = 1.097k Ω
• R2 = 28.26k Ω
• R1 = 97.92k Ω
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Preparations for Next Lab
• Post Lab 9 is to be turned in before you leave today
• Pre Lab 10
– Read through the lab and be familiar with FET
operation
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LABORATORY 10 – FIELD
EFFECT TRANSISTORS
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JFET Operation
• N-Channel JFET
– P-type gates
– N-type channel with ohmic contacts at both ends
– P-Channel switches doping type positions
• Current flow is controlled by gate bias
– VGS = 0 – Depletion regions exist between
reverse biased p-n junctions, but a channel of ntype material allows current flow from drain to
source
– VGS << 0 – Depletion region extends completely
across n-type region cutting off current flow
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JFET Equations
• Linear Region
– IDS = Kn [2(VGS – VP) VDS – VDS2]
– Where Kn = IDSS/VP2
– IDSS – 0 Voltage current VP – pinchoff voltage
• Saturation Region
– IDS = Kn(VGS(Sat))2
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Preparations for Next Lab
• Post Lab 10
– 3 questions under Lab Report
• Pre Lab 11
– Simulate Figure 11.6
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LABORATORY 11 – FET BIAS
AND AMPLIFICATION
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JFET Amplifier
• Similar circuit layout to BJT amplifier circuits
– Common-drain analogous to Common-emitter
– Common-source analogous to Common-collector
• Voltage controlled device with negligible current
draw into gate
– Only reverse saturation current of p-n junctions
will flow
Common-source
Common-drain
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JFET Small Signal AC Model
• gm = ΔID/ΔVGS
• rd = dVDS/dID
• Amplification
– μ = gmrd
• When applied to common-drain circuit:
• If RS = 0 or bypassed
– Av = gm(rd||RD)
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Preparations for Next Lab
• Post Lab 11
– 3 questions under Lab Report
• Pre Lab 12
– Be familiar with logic gate operation
– Simulate both CMOS inverter and NAND gate
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LABORATORY 12 – BASIC
LOGIC CIRCUITS
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CMOS Logic
• Complementary Metal Oxide Semiconductor
(CMOS)
– Utilizes both pMOS and nMOS transistors
• Currently the most widely used technology for logic
gates
• CMOS has helped push speeds faster and sizes
smaller due to the ever improving transistor
technology that allows lower voltage operation and
smaller gate sizes
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CMOS Inverter
• pMOS transistor source
tied to VCC
• nMOS transistor source
tied to GND
• Both gates tied together and
used as input
• Both drains tied together and
used as output
• When In = 5 V: pMOS off, nMOS on, Out grounded
• When In = 0 V: pMOS on, nMOS off, Out tied to +5
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Slew Rate
• Slew rate refers to the
rate at which signals
rise and fall
• Rise and fall times
determine how fast a
circuit can operate (maximum operating frequency)
• Real signals do not instantaneously switch from high
to low
• Transition times can lead to circuit glitches or missed
data
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The End!
• Enjoy the rest of your semester
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