Transcript Slide 1

CV Characterization
Using
4284A LCR Meter
&
4155C Semiconductor Parametric Analyzer
Device Characterization Lab
Center of Excellence in Nanoelectronics
Indian Institute of Science
Bangalore
Metallization
Oxide Reliability
Device Testing (Capacitance and Vth)
New Process, Device(FET’s) and Circuit Developments
C-V/I-V Measurements
 High Frequency
 Low Frequency (Qusistatic C-V)
 Sequential C-V measurements
 Simultaneous C-V and I-V measurements
 Quality Testing
Reliability Testing:
 Breakdown Measurement
-Breakdown Voltage & TDDB
-Charge to Breakdown (QBD)
 Current-Voltage Measurement
-Oxide Leakage Current
-Stress Induced Leakage Current(SILC)
DUT:
 n-type Semiconductor
 32nm SiO 2
 Area=1.34×10-7cm2
Breakdown Voltage
 Voltage or Current is Applied until Oxide breaks down
-constant V or constant I method
-Ramped V or Ramped I method
 Simple Indication of Oxide Quality
Time Dependent Dielectric
Breakdown (TDDB)
 Large number of samples
of measured parameter
(I or V) taken while another parameter is constant
(V or I)
 Used to study the reliability of the Dielectric and to
predict the life time
 Since a particular source (I or V) is applied for a longer
period of time, the effect of I or V stress can be
studied. (Temperature stress is also possible)
30V Constant Supply
20V Constant Supply
40V Constant Supply
Charge to Breakdown (QBD)
 Constant or stepped current is forced through
dielectric
 The charge starts to increase and it breaks down the
oxide
 total applied charge can be integrated to calculate the
definite amount of charge need to break down the
oxide
Oxide leakage current
 In operating
range leaky oxide exhibits linear
dependency on applied voltage
 Characteristic curve depends on the thickness of the
oxide because the tunneling phenomena is different
for different oxide thickness
Stress Induced Leakage Current(SILC)
 I-V characteristics measured after each stress cycle
IVStressIVStressIVStress….
 Stress can be voltage or current stress over time
 Damage due to stress increases the current in
subsequent IV measurements.
40V Constant Supply
0.1A Constant Supply