Transcript Slide 1

Design and Implementation of VLSI Systems
(EN0160)
Sherief Reda
Division of Engineering, Brown University
Spring 2007
Lecture 02: CMOS Logic
• Last time:
• What is a VLSI system?
• What is a VLSI system composed of? How many?
• The life cycle of IC design
• Topics covered in the class
• Today:
• Simple descriptions of nMOS and pMOS transistors
• How to build logic gates from these devices?
Impact of doping on silicon resistivity
silicon
4.9951022 atoms in cm3
Resistivity 3.2  105 Ωcm
dope with
phosphorous
or arsenic 
n-type
1 atom in billion  88.6 Ωcm
1 atom in million  0.114 Ωcm
1 atom in thousand  0.00174 Ωcm
dope with
boron 
p-type
1 atom in billion  266.14 Ωcm
1 atom in million  0.344 Ωcm
1 atom in thousand  0.00233 Ωcm
 Electrons are more mobile/faster than holes
What happens if we sandwich p & n types?
A
p
n
B
One-dimensional
representation
Al
More sandwiches: nMOS transistor
Source
Gate
Drain
Polysilicon
SiO2
n+
n+
p
g=0: When the gate is at a low voltage (VGS < VT):
 p-type body is at low voltage
 source and drain-junctions diodes are OFF
 transistor is OFF, no current flows
g=1: When the gate is at a high voltage (VGS ≥ VT):
 negative charge attracted to body
 inverts a channel under gate to n-type
 transistor ON, current flows
bulk Si
nMOS pass ‘0’ more strongly than ‘1’
Source
Gate
Drain
Polysilicon
SiO2
n+
n+
p
• Why does ‘1’ pass degraded?
bulk Si
More sandwiches: pMOS transistor
Source
Gate
Drain
Polysilicon
SiO2
p+
p+
n
g=0: When the gate is at a low voltage (VSG < VT):
 positive charge attracted to body
 inverts a channel under gate to p-type
 transistor ON, current flows
g=1: When the gate is at a high voltage (VSG ≥ VT):
 negative charge attracted to body
 source and drain junctions are OFF
 transistor OFF, no current flows
bulk Si
pMOS pass ‘1’ more strongly than ‘0’
Source
Gate
Drain
Polysilicon
SiO2
p+
p+
n
• Why does ‘0’ pass degraded?
bulk Si
An nMOS and pMOS make up an inverter
pMOS + nMOS = CMOS
More CMOS gates
B
A
B
F = AB
0
What is this gate function?
What’s wrong about this design?
3-input NANDs
Series-Parallel Combinations
What are the transistor schematics of the
NOR gate?
AOI
Transmission gate
MUX
Latch design
Flip-flop (edge triggered) design
Summary
• We studied CMOS gate structure but we
do not know they get fabricated or how
fast they are
• Next time: CMOS fabrication