Transcript Slide 1

Chapter 9
Output Stages And Power Amplifiers
Low Output Resistance – no loss of gain
Small-Signal Not applicable
Total-Harmonic Distortion (fraction of %)
Efficiency
Temperature Requirements
Collector current waveforms for transistors operating in (a) class A, (b) class B,
(c) class AB, and (d) class C amplifier stages.
Class A
An emitter follower (Q1) biased with a
constant current I supplied by transistor Q2.
Transfer Characteristics
Transfer characteristic of the emitter follower. This linear
characteristic is obtained by neglecting the change in vBE1
with iL. The maximum positive output is determined by
the saturation of Q1. In the negative direction, the limit of
the linear region is determined either by Q1 turning off or
by Q2 saturating, depending on the values of I and RL.
Class A
Transfer
Characteristics
Crossover distortion can be eliminated by biasing the transis tors at a small,
non-zero current.
A bias Voltage VBB is applied betw een Qn and Qp.
For vi = 0, vo = 0, and a voltage V BB/2 appears across the base-emitter junction
of each transis tor.
V BB
iN
iP
IS e
IQ
2 VT
VBB is selected to result the required quis cent current IQ
V BB
vo
vi 
iN
iP  iL
2
v BEN  v EBP
iN
iN
2
2
IQ
 v BEN
V BB
2
 iL  iN  I Q
2
0
 iN 
 iP 

V

ln

T 

 IS 
 IS 
V T  ln 
 iQ 

 IS 
2  V T  ln 
Class A
Transfer Characteristics
From f igure 9.3 w e can see that
v omax VCC  VCE1sat
In the negative direction, the limite of the linear region is
determined either by Q1 turning off
v Omin
I RL
or by Q2 saturating
v Omin
VCC  VCE2sat
Depending on the values of I and RL. The absolutely low est
output voltage is that given by the previous equation and is
achieved provided that the bias current I is greater than the
magnitude of the corresponding load current
I
VCC  VCE2sat
RL
Class A
Transfer Characteristics
Exercises D9.1 and D9.2
Class A
Signal Waveforms
1
2
vo( t ) 0
vcE1( t ) 1
1
0
5
10
0
0
t
10
t
2
1
ic1( t ) 1
0
5
pD1 ( t ) 0.5
0
5
t
10
0
0
5
t
10
Class A
Power Dissipation
P
VCC  I
Largest Power Dis s ipation W hen v o = 0
Q1 mus t be able t o withsat nd a c ont inuous diss ipation of VC C *I
The power diss ipat ion of Q1 depends on t he v alue of R L.
I f R L is inf init e, iC 1 = I and the dis s ipation in Q1 depends on v o.
Max imum power diss ipation will oc cur when v o = -VC C s inc e v C E1 will be 2VCC .
pD1 = 2VC C*I . This condit ion would not normally persis t f or a prolonged int erv al, so
t he des ign need not be t hat c onserv at iv e. The av erage pD1 = VCC *I
W hen RL is zero a pos itiv e v olt age would result in a t heoret ically inf init e current (larg
pract ical v alue) would f low t hrough Q1. Short -c irc uit prot ec tion is nec ess ary .
Class A
Power Conversion Efficiency

PL
l oad _p ow erP
 L
su pp ly _p o wer
 PS
1
2

Vo
2
Vo
RL
PS
2  VCC  I

1
4
2

av erage v oltage
Vo
I  RL  VCC
Vo  VCC
 Vo 


4  I  RL 
1


 Vo 


 VCC 
Vo  I  RL
m axim um ef f ic ienc y is obtained when
Vo
VCC
I  RL
Class A
Exercise 9.4
3
Vo peak   8
I   1 00 1 0
 Vo peak 


PL  
2


1 00
RL   1 00
2
PL  0 .32
P p lu s  VCC  I
P p lu s 1
P mi nu s  VCC  I
P mi nu s 1
 
PL
PS
VCC   1 0
  0 .16
PS   P p lu s P mi nu s
Biasing the Class B Output
• No DC current is used to bias this configuration.
• Activated when the input voltage is greater than the Vbe
for the transistors.
• npn Transistor operates when positive, pnp when negative.
• At a zero input voltage, we get no output voltage.
Class A
Power Conversion Efficiency
CLASS A
Many class A amplifiers use the same transistor(s) for both halves of the audio
waveform. In this configuration, the output transistor(s) always has current
flowing through it, even if it has no audio signal (the output transistors never 'turn
off'). The current flowing through it is D.C.
A pure class 'A' amplifier is very inefficient and generally runs very hot even
when there is no audio output. The current flowing through the output
transistor(s) (with no audio signal) may be as much as the current which will be
driven through the speaker load at FULL audio output power. Many people
believe class 'A' amps to sound better than other configurations (and this may
have been true at some point in time) but a well designed amplifier won't have
any 'sound' and even the most critical 'ear' would be hard-pressed to tell one
design from another.
NOTE: Some class A amplifiers use complimentary (separate transistors for
positive and negative halves of the waveform) transistors for their output stage.
Class B
CLASS 'B'
Circuit Operation
A class 'B' amplifier uses complimentary transistors
for each half of the waveform.
A true class 'B' amplifier is NOT generally used for
audio. In a class 'B' amplifier, there is a small part of
the waveform which will be distorted. You should
remember that it takes approximately .6 volts
(measured from base to emitter) to get a bipolar
transistor to start conducting. In a pure class 'B'
amplifier, the output transistors are not "biased" to an
'on' state of operation. This means that the the part
of the waveform which falls within this .6 volt window
will not be reproduced accurately.
Class B output stage.
The output transistors for each half of the waveform
(positive and negative) will each have a .6 volt area
in which they will not be conducting. The distorted
part of the waveform is called 'crossover' or 'notch'
distortion. Remember that distortion is any unwanted
variation in a signal (compared to the original signal).
The diagram below shows what crossover distortion
looks like.
Class B
Circuit Operation
Transfer characteristic for the class B output stage in Fig. 9.5.
Operation
When the input voltage rises to be large enough
to overcome the Vbe, it will begin to cause an
output voltage to appear. This occurs because
Qn begins to act like an emitter follower and Qp
shuts off. The input will be followed on the
emitter until the transistor reaches saturation.
The maximum input voltage is equal to the
following:
v i max VCC  VCEN sat
The same thing will begin to happen if the input voltage is negative
by more than the Veb of the transistor. This causes the Qp to act like
an emitter follower and Qn turns off. This will continue to behave
this way until saturation occurs at a minimum input voltage of:
vimin Vcc  VECP sat
Emitter Follower Configuration (Chapter 4)
vb
vs
Characteristics of the Emitter Follower:
•High Input Resistance
•Low Output Resistance
•Near Unity Gain
   1 re  p arRL ro
RS     1  re  p ar RL ro  


vo
par ro  RL
vb
re  par ro  RL


Rs will be small for most
configurations, so the vb/vs will
be a little less than unity. The
same is true for re, so vo/vb will
be a little less than unity making
our vo/vs a little less than unity.
Transfer Characteristic
Push-Pull Nature of Class B
• Push: The npn transistor will push the current to ground
when the input is positive.
• Pull: The pnp transistor will pull the current from the
ground when the input is negative.
Crossover Distortion
The Crossover Distortion is due to the dead band of input
voltages from -.5V to .5V. This causes the Class B output
stage to be a bad audio amplifier. For large input signals,
the crossover distortion is limited, but at small input signals,
it is most pronounced.
Graph of Crossover Distortion
Illustrating how the dead band in the class B transfer characteristic results in crossover distortion.
Power Efficiency
Load Power:
Since each transistor is only conducting for
one-half of the time, the power drawn from
each source will be the same.
2
PL
1 Vo p

2 RL
Ps
2


1 Vo p

2 RL
PL
2 Ps
This efficiency will be at a max when
Vop is at a max. Since Vop cannot
exceed Vcc, the maximum efficiency
will occur at pi/4.
1 Vo p
2 
 VCC
 RL
 Vo p

4 VCC
 max
1 Vop

 VCC
 RL

4
This will be approximately 78.5%,
much greater than the 25% for
Class A.
Class AB
Circuit Operation
Crossover distortion can be eliminated by biasing the transis tors at a small,
non-zero current.
A bias Voltage VBB is applied betw een Qn and Qp.
For vi = 0, vo = 0, and a voltage V BB/2 appears across the base-emitter junction
of each transis tor.
V BB
iN
iP
IS e
IQ
2 VT
VBB is selected to result the required quis cent current IQ
V BB
vo
vi 
iN
iP  iL
2
v BEN  v EBP
iN
iN
2
2
IQ
 v BEN
V BB
2
 iL  iN  I Q
2
0
 iN 
 iP 

V

ln

T
 I 
 IS 
 S
V T  ln 
 iQ 

 IS 
2  V T  ln 
Class AB
Output Resistance
Class AB
Exercise 9.6
Calvin Colle ge - ENGR 332
Class AB Output Stage Am plifier
C onsider the class AB c irc uit (illust rat ed below) wit h Vc c=15 V, I Q=2 mA, RL=100 ohms.
D et ermine VBB. D et ermine the v alues of iL, iN , iP, v BEN , v EBP, v I , v O/v I , Rout, and v o/ v
v O f or v O v ary ing f rom -10 to 10V.
N ot e that v O/ v I is t he large s ignal v oltage gain and v o/v i is the incremental gain obtained as
R L/ (R L+R out). The inc rement al gain is equal t o the slope of the t rans f er curv e.
As sume QN and QP t o be m at ched, wit h IS=10E-13.
Class AB
Exercise 9.6
under quies cent c onditions iN =iP=IQ
v O=v I =0
Solv ing f or VBB
 13
VBB  1
G iv en
IQ
IS e
IS   1 0
VT   0 .02 5
VBB
2
VT
VBB  Fin d( VBB)
i   0  1 00
VBB  1 .18 6
3
IQ   2 1 0
RL   1 00
Class AB
Exercise 9.6
v O   1 0 
i
iLi
i
5
vO
iL 
i
i
RL
0
10
0
vO i
10
Class AB
Solv ing f or iN
i N   0 .02
initial guess es
i LD  0 .02
IQ   0 .00 2
Exercise 9.6
G iv en
2
2
i N  i LDi
 N  IQ
0
i NN( IQ i LD)   Fin d( i N)
i   0  1 00

IQ   0 .00 2
i N   i NN IQ  i L
i
i LD   i L
i
i

i
i
1 10
i
3
100
5
iN
10
 4 .99 7 1 0
10
iNi  1000
1
0.1
0.01
10
5
0
vOi
i P   i N  i LD
i
i
i
5
1 10
3
100
iPi 1000
10
1
0.1
0.01
 i Ni 

v BEN   VT l n
i
 IS 
10
5
0
vOi
10
1 10
100
Class AB
iPi 1000
10
1
0.1
Exercise 9.6
0.01
10
5
 i Ni 

v BEN   VT l n
i
IS
 
vOi
vBENi
 i Pi 

IS
 
v EBP   VT l n
i
0
0.6
0.5
10
5
0
vOi
vEBPi 0.6
10
5
0
vOi
Class AB
Exercise 9.6
v I   v O  v BEN 
i
i
i
VBB
2
0
vIi
vO
v Ov I  
i
i
10
10
5
vI
0
vOi
i
vOvIi 0.5
0
10
5
0
vOi
Class AB
vOvIi 0.5
Exercise 9.6
0
Ro ut  
i
10
5
0
vOi
VT
iP  iN
i
i
5
Rout i
0
v ov i  
i
10
RL
5
0
5
10
vOi
RL  Ro ut
i
1
vovii
0.95
10
5
0
vOi
5
10
Simplified internal circuit of the LM380 IC power amplifier (Courtesy National
Semiconductor Corporation.)
Small-signal analysis of the circuit in Fig. 9.30. The circled numbers indicate the order of
the analysis steps.
Structure of a power op amp. The circuit consists of an op amp followed by a class AB
buffer similar to that discussed in Section 9.7. The output current capability of the buffer,
consisting of Q1, Q2, Q3, and Q4, is further boosted by Q5 and Q6.
The bridge amplifier configuration.
Double-diffused vertical MOS transistor (DMOS).
Typical iD-vGS characteristic for a power MOSFET.
A class AB amplifier with MOS output transistors and BJT drivers. Resistor R3 is adjusted
to provide temperature compensation while R1 is adjusted to yield to the desired value of
quiescent current in the output transistors.